Patents by Inventor Mayukhee Das

Mayukhee Das has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices having discretely located passivation material, and associated systems and methods
    Patent number: 10896886
    Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: January 19, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Mayukhee Das, Jonathan S. Hacker, Christopher J. Gambee, Chandra S. Tiwari
  • SEMICONDUCTOR DEVICES HAVING DISCRETELY LOCATED PASSIVATION MATERIAL, AND ASSOCIATED SYSTEMS AND METHODS
    Publication number: 20190189576
    Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.
    Type: Application
    Filed: February 14, 2019
    Publication date: June 20, 2019
    Inventors: Mayukhee Das, Jonathan S. Hacker, Christopher J. Gambee, Chandra S. Tiwari
  • Semiconductor devices having discretely located passivation material, and associated systems and methods
    Patent number: 10262961
    Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: April 16, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Mayukhee Das, Jonathan S. Hacker, Christopher J. Gambee, Chandra S. Tiwari
  • SEMICONDUCTOR DEVICES HAVING DISCRETELY LOCATED PASSIVATION MATERIAL, AND ASSOCIATED SYSTEMS AND METHODS
    Publication number: 20190051623
    Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.
    Type: Application
    Filed: May 17, 2018
    Publication date: February 14, 2019
    Inventors: Mayukhee Das, Jonathan S. Hacker, Christopher J. Gambee, Chandra S. Tiwari
  • Semiconductor devices having discretely located passivation material, and associated systems and methods
    Patent number: 10002840
    Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad, and a conductive interconnect can extend from the conductive structure.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: June 19, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Mayukhee Das, Jonathan S. Hacker, Christopher J. Gambee, Chandra S. Tiwari