Patents by Inventor Mayuko Tatemichi

Mayuko Tatemichi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210023818
    Abstract: A radio wave absorbing material including a fluoropolymer. The fluoropolymer contains a vinylidene fluoride unit, and the radio wave absorbing material absorbs a radio wave having a frequency in a range of 1 MHz to 100 MHz.
    Type: Application
    Filed: March 26, 2019
    Publication date: January 28, 2021
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takeshi HAZAMA, Nobuyuki KOMATSU, Kouji YOKOTANI, Mayuko TATEMICHI, Akio HIGAKI, Tomohiro TANAKA
  • Publication number: 20200362127
    Abstract: A film having a dielectric dissipation factor at a frequency of 1 kHz and 160° C. of 0.02% or lower and a dielectric breakdown strength at 160° C. of 400 V/?m or higher. Also disclosed is a film including at least one fluoropolymer selected from a tetrafluoroethylene/perfluoro(alkyl vinyl ether) copolymer and a tetrafluoroethylene/hexafluoropropylene copolymer, the fluoropolymer having a crystallinity of 65% or higher.
    Type: Application
    Filed: October 29, 2018
    Publication date: November 19, 2020
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mayuko TATEMICHI, Takeshi HAZAMA, Nobuyuki KOMATSU, Tatsuya HIGUCHI, Kouji YOKOTANI, Akio HIGAKI, Tomohiro TANAKA
  • Patent number: 10745531
    Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change(%)=(B?A)/A×100.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: August 18, 2020
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Takashi Kanemura, Eri Mukai, Takeshi Hazama, Tetsuhiro Kodani, Nobuyuki Komatsu, Hisako Nakamura, Kouji Yokotani, Mayuko Tatemichi, Akio Higaki
  • Publication number: 20200032014
    Abstract: The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30° C., a volume resistivity of 5E+15 ?·cm or higher at 30° C., and a breakdown strength of 500 V/?m or higher.
    Type: Application
    Filed: September 27, 2017
    Publication date: January 30, 2020
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takeshi HAZAMA, Nobuyuki KOMATSU, Kouji YOKOTANI, Mayuko TATEMICHI, Tatsuya HIGUCHI, Keiko KOGA
  • Publication number: 20190382544
    Abstract: A fluororesin film containing a fluororesin. The fluororesin film has on at least one surface thereof a ten-point average roughness of 0.100 to 1.200 ?m and an arithmetic average roughness of 0.010 to 0.050 ?m. Further, the fluororesin film has a breakdown strength of 400 V/?m or higher.
    Type: Application
    Filed: January 17, 2018
    Publication date: December 19, 2019
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Kouji YOKOTANI, Nobuyuki KOMATSU, Takeshi HAZAMA, Mayuko TATEMICHI, Akio HIGAKI, Tatsuya HIGUCHI, Keiko YAMAZAKI
  • Publication number: 20180223059
    Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change (%)=(B?A)/A×100.
    Type: Application
    Filed: July 13, 2016
    Publication date: August 9, 2018
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takashi KANEMURA, Eri MUKAI, Takeshi HAZAMA, Tetsuhiro KODANI, Nobuyuki KOMATSU, Hisako NAKAMURA, Kouji YOKOTANI, Mayuko TATEMICHI, Akio HIGAKI
  • Publication number: 20150368413
    Abstract: The present invention aims to provide a film having a high dielectric constant and a low dissipation factor. The high dielectric film of the present invention includes a vinylidene fluoride/tetrafluoroethylene copolymer (A) with a mole ratio (vinylidene fluoride)/(tetrafluoroethylene) of 95/5 to 80/20. The film includes an ?-crystal structure and a ?-crystal structure. The ratio of the ?-crystal structure is 50% or more.
    Type: Application
    Filed: October 16, 2013
    Publication date: December 24, 2015
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mayuko TATEMICHI, Miharu OTA, Kouji YOKOTANI, Nobuyuki KOMATSU, Hisako NAKAMURA, Fumiko SHIGENAI, Takeshi HAZAMA, Masakazu KINOSHITA, Meiten KOH, Takuji ISHIKAWA, Takashi IGUCHI, Kazunobu UCHIDA, Tomoyuki FUKATANI, Takahiro KITAHARA, Tetsuhiro KODANI
  • Publication number: 20150332855
    Abstract: The present invention aims to provide a multilayer film which can increase the capacitance. The present invention relates to a multilayer film including a first electrode layer, a resin substrate, a second electrode layer, and a dielectric layer stacked in the order set forth. The dielectric layer includes a vinylidene fluoride/tetrafluoroethylene copolymer (A). The copolymer (A) satisfies a mole ratio (vinylidene fluoride)/(tetrafluoroethylene) of 97/3 to 60/40.
    Type: Application
    Filed: November 14, 2013
    Publication date: November 19, 2015
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Meiten KOH, Nobuyuki KOMATSU, Takeshi HAZAMA, Hisako NAKAMURA, Kouji YOKOTANI, Miharu OTA, Fumiko SHIGENAI, Mayuko TATEMICHI, Masakazu KINOSHITA
  • Patent number: 9156930
    Abstract: Provided is a film for a film capacitor in which electrical insulation, and especially electrical properties at high temperatures are improved while a high dielectric constant of a vinylidene fluoride resin is maintained. The film for a film capacitor includes a tetrafluoroethylene resin (a1) that includes a vinylidene fluoride unit and a tetrafluoroethylene unit in the vinylidene fluoride unit/tetrafluoroethylene unit ratio (mol %) of 0/100 to 49/51 as a film-forming resin (A).
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: October 13, 2015
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Meiten Koh, Eri Mukai, Nobuyuki Komatsu, Kouji Yokotani, Mayuko Tatemichi, Kakeru Hanabusa, Takahiro Kitahara, Takuma Kawabe
  • Patent number: 8934216
    Abstract: The present invention provides a high dielectric film for a film capacitor obtained by molding a film forming composition for a film capacitor comprising a thermoplastic resin (A) and surface-treated high dielectric inorganic particles (B) obtained by treating the surfaces of high dielectric inorganic particles (b1) having a dielectric constant (20° C., 1 kHz) of 100 or more with a low dielectric compound (b2) having a dielectric constant (20° C., 1 kHz) of 10 or less. This high dielectric film for a film capacitor can restrain the decrease of electrical insulating property, in spite of the high dielectric inorganic particles being dispersed at a high filling rate.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: January 13, 2015
    Assignee: Daikin Industries, Ltd.
    Inventors: Kouji Yokotani, Miharu Ota, Mayuko Tatemichi, Nobuyuki Komatsu, Eri Mukai, Meiten Koh
  • Patent number: 8675345
    Abstract: There is provided a thin highly dielectric film for a film capacitor being excellent in mechanical strength, in which highly dielectric inorganic particles can be blended to a dielectric resin at high ratio, and rubber particles (B) and preferably highly dielectric inorganic particles (C) are dispersed in a thermoplastic resin (A).
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: March 18, 2014
    Assignee: Daikin Industries, Ltd.
    Inventors: Mayuko Tatemichi, Miharu Ota, Kouji Yokotani, Nobuyuki Komatsu, Eri Mukai, Meiten Koh
  • Patent number: 8576540
    Abstract: The present invention provides a nonporous highly dielectric film which can improve withstanding voltage, insulating property and dielectric constant, especially can decrease a dielectric loss at high temperatures and can be made thin, and a coating composition for forming the highly dielectric film comprising (A) a vinylidene fluoride resin, (B) a cellulose resin and (C) a solvent.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: November 5, 2013
    Assignee: Daikin Industries, Ltd.
    Inventors: Meiten Koh, Mayuko Tatemichi, Eri Mukai, Miharu Ota, Kouji Yokotani, Nobuyuki Komatsu
  • Publication number: 20130188293
    Abstract: Provided is a film for a film capacitor in which electrical insulation, and especially electrical properties at high temperatures are improved while a high dielectric constant of a vinylidene fluoride resin is maintained. The film for a film capacitor includes a tetrafluoroethylene resin (a1) that includes a vinylidene fluoride unit and a tetrafluoroethylene unit in the vinylidene fluoride unit/tetrafluoroethylene unit ratio (mol %) of 0/100 to 49/51 as a film-forming resin (A).
    Type: Application
    Filed: September 21, 2011
    Publication date: July 25, 2013
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Meiten Koh, Eri Mukai, Nobuyuki Komatsu, Kouji Yokotani, Mayuko Tatemichi, Kakeru Hanabusa, Takahiro Kitahara, Takuma Kawabe
  • Publication number: 20120293909
    Abstract: The present invention provides a high dielectric film comprising: a film-forming resin (A); and inorganic particles (B), wherein the film-forming resin (A) contains a vinylidene fluoride resin (a1), an amount of the inorganic particles (B) is not less than 0.01 parts by mass and less than 10 parts by mass for each 100 parts by mass of the film-forming resin (A), and the inorganic oxide particles (B) is at least one selected from the group consisting of: (B1) inorganic oxide particles of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table, or inorganic oxide composite particles of these; (B2) inorganic composite oxide particles represented by formula (1): M1a1Nb1Oc1 wherein M1 represents a metallic element of Group 2, N represents a metallic element of Group 4, a1 represents 0.9 to 1.1, b1 represents 0.9 to 1.1, c1 represents 2.8 to 3.
    Type: Application
    Filed: January 11, 2011
    Publication date: November 22, 2012
    Applicant: Daikin Industries, Ltd.
    Inventors: Mayuko Tatemichi, Nanako Takano, Miharu Ota, Kouji Yokotani, Nobuyuki Komatsu, Eri Mukai, Meiten Koh
  • Publication number: 20110255210
    Abstract: There is provided a thin highly dielectric film for a film capacitor being excellent in mechanical strength, in which highly dielectric inorganic particles can be blended to a dielectric resin at high ratio, and rubber particles (B) and preferably highly dielectric inorganic particles (C) are dispersed in a thermoplastic resin (A).
    Type: Application
    Filed: December 21, 2009
    Publication date: October 20, 2011
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mayuko Tatemichi, Miharu Ota, Kouji Yokotani, Nobuyuki Komatsu, Eri Mukai, Meiten Koh
  • Publication number: 20110249374
    Abstract: The present invention provides a high dielectric film for a film capacitor obtained by molding a film forming composition for a film capacitor comprising a thermoplastic resin (A) and surface-treated high dielectric inorganic particles (B) obtained by treating the surfaces of high dielectric inorganic particles (b1) having a dielectric constant (20° C., 1 kHz) of 100 or more with a low dielectric compound (b2) having a dielectric constant (20° C., 1 kHz) of 10 or less. This high dielectric film for a film capacitor can restrain the decrease of electrical insulating property, in spite of the high dielectric inorganic particles being dispersed at a high filling rate.
    Type: Application
    Filed: December 21, 2009
    Publication date: October 13, 2011
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Kouji Yokotani, Miharu Ota, Mayuko Tatemichi, Nobuyuki Komatsu, Eri Mukai, Meiten Koh
  • Publication number: 20110013343
    Abstract: The present invention provides a nonporous highly dielectric film which can improve withstanding voltage, insulating property and dielectric constant, especially can decrease a dielectric loss at high temperatures and can be made thin, and a coating composition for forming the highly dielectric film comprising (A) a vinylidene fluoride resin, (B) a cellulose resin and (C) a solvent.
    Type: Application
    Filed: March 17, 2009
    Publication date: January 20, 2011
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Meiten Koh, Mayuko Tatemichi, Eri Mukai, Miharu Ota, Kouji Yokotani, Nobuyuki Komatsu