Abstract: A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.

Abstract: A method for selectively etching a nitride layer with respect to a silicon oxide based layer over a substrate is provided. The substrate is placed in a plasma processing chamber. The nitride layer is etched, comprising the steps of flowing a nitride etch gas comprising a hydrocarbon species, an oxygen containing species and a fluorocarbon or hydrofluorocarbon species into the plasma chamber, forming a plasma from the nitride etch gas, and using the plasma from the nitride etch gas to selectively etch the nitride layer with respect to the silicon oxide based layer.

Abstract: A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.

Abstract: A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.