Abstract: A semiconductor pressure sensor includes a first silicon substrate and a second silicon substrate. One main surface of the second silicon substrate has a recess formed therein. The recess has a support that protrudes toward the first silicon substrate formed therein. The support includes four side parts that are arranged to form a rectangular frame shape. The recess and the first silicon substrate have an inner cavity and an outer cavity that are formed therebetween. The inner cavity is arranged on an inner side of the support, and the outer cavity is arranged on an outer side of the support. The other main surface of the first silicon substrate has piezoresistive elements formed therein. The piezoresistive elements are arranged at or in the vicinity of a position overlapping the support, as seen from a normal direction of the first silicon substrate.

Abstract: This semiconductor pressure sensor includes: a first semiconductor substrate; a second semiconductor substrate; and a first piezoresistance element and a second piezoresistance element provided in the second semiconductor substrate. A first recess and a second recess are formed on the first semiconductor substrate, and a first cavity surrounded by the first recess and the second semiconductor substrate and a second cavity surrounded by the second recess and the second semiconductor substrate are formed. The first piezoresistance element is formed at a position overlapping an outer periphery of the first cavity or a position inward of the outer periphery of the first cavity. The second piezoresistance element is formed at a position overlapping an outer periphery of the second cavity, a position overlapping an inner periphery of the second cavity, or a position inward of the outer periphery and outward of the inner periphery of the second cavity.