Abstract: A semiconductor memory device to an exemplary aspect of the present invention includes a plurality of memory cells, a plurality of word lines, a plurality of bit line pairs, a plurality of column selectors, a common signal line pair including one common line commonly connected to one of each of the plurality of bit line pairs, and the other common line commonly connected to the other of each of the plurality of bit line pairs, a sense amplifier amplifying the potential difference of the common signal line pair, and a plurality of capacitance adding circuits that balance with parasitic capacitances of the column selectors which are not selected, the capacitance adding circuits being provided respectively between the one of each of the bit line pairs and the other common line and between the other of each of the bit line pairs and the one common line.

Abstract: A semiconductor memory device to an exemplary aspect of the present invention includes a plurality of memory cells, a plurality of word lines, a plurality of bit line pairs, a plurality of column selectors, a common signal line pair including one common line commonly connected to one of each of the plurality of bit line pairs, and the other common line commonly connected to the other of each of the plurality of bit line pairs, a sense amplifier amplifying the potential difference of the common signal line pair, and a plurality of capacitance adding circuits that balance with parasitic capacitances of the column selectors which are not selected, the capacitance adding circuits being provided respectively between the one of each of the bit line pairs and the other common line and between the other of each of the bit line pairs and the one common line.