Patents by Inventor Mayumi Shigeno

Mayumi Shigeno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
    Patent number: 7361613
    Abstract: A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: April 22, 2008
    Assignee: Fujitsu Limited
    Inventors: Mitsuaki Hori, Naoyoshi Tamura, Mayumi Shigeno
  • Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
    Publication number: 20060252280
    Abstract: A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
    Type: Application
    Filed: July 6, 2006
    Publication date: November 9, 2006
    Applicant: FUJITSU LIMITED
    Inventors: Mitsuaki Hori, Naoyoshi Tamura, Mayumi Shigeno
  • Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
    Patent number: 7098153
    Abstract: A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
    Type: Grant
    Filed: September 16, 2003
    Date of Patent: August 29, 2006
    Assignee: Fujitsu Limited
    Inventors: Mitsuaki Hori, Naoyoshi Tamura, Mayumi Shigeno
  • Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
    Publication number: 20040061159
    Abstract: A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
    Type: Application
    Filed: September 16, 2003
    Publication date: April 1, 2004
    Applicant: FUJITSU LIMITED
    Inventors: Mitsuaki Hori, Naoyoshi Tamura, Mayumi Shigeno