Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric film laminate including a sapphire substrate and a lead zirconate titanate niobate film and a potassium niobate film formed on the sapphire substrate.

Abstract: To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.

Abstract: To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

Abstract: A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer, an electrode layer formed above the potassium niobate layer or the potassium niobate solid solution layer, and another substrate formed above the electrode layer.

Abstract: A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

Abstract: A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, and a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1?a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A complex metal oxide raw material composition used for forming a complex metal oxide, the complex metal oxide being shown by a general formula AB1-xCxO3, wherein an element A includes at least Pb, an element B includes at least one of Zr, Ti, V, W, and Hf, and an element C includes at least one of Nb and Ta, and the raw material composition including: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.

Abstract: To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.

Abstract: A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, and a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer.

Abstract: A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer, an electrode layer formed above the potassium niobate layer or the potassium niobate solid solution layer, and another substrate formed above the electrode layer.

Abstract: A piezoelectric film laminate including a sapphire substrate and a lead zirconate titanate niobate film and a potassium niobate film formed on the sapphire substrate.

Abstract: To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.