Patents by Inventor Mayuzumi Masanori

Mayuzumi Masanori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer
    Patent number: 5834363
    Abstract: There is disclosed a method of manufacturing a semiconductor wafer which has a dopant evaporation preventive film formed on one of main surfaces thereof, wherein a film serving as the dopant evaporation preventive film is formed on the one of the main surface by a plasma CVD method. There is also disclosed a method of manufacturing a semiconductor wafer having a plasma CVD film on one of main surfaces, wherein the plasma CVD film is formed on the one of the main surfaces of the semiconductor wafer so that a stress between the plasma CVD film and the semiconductor wafer falls in a range of 1.times.10.sup.8 -1.times.10.sup.9 dyne/cm.sup.2. Finally, a semiconductor wafer is disclosed having a plasma CVD film formed on only one face that serves as a barrier to autodoping during processing and which may function to create within the semiconductor wafer a strained layer that can getter impurities.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: November 10, 1998
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Mayuzumi Masanori