Abstract: Semiconductor devices and related electrostatic discharge (ESD) protection methods are provided. An exemplary semiconductor device includes an interface for a signal and a multi-triggered protection arrangement coupled between the interface and a reference node to initiate discharge of the signal between the interface and the reference node based on any one of a plurality of different characteristics of the signal. Discharge of the signal at the interface is initiated based on a first characteristic of the signal, and thereafter, the discharge of the signal at the interface is maintained based on another characteristic of the signal.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.

Abstract: Semiconductor devices and related electrostatic discharge (ESD) protection methods are provided. An exemplary semiconductor device includes an interface for a signal and a multi-triggered protection arrangement coupled between the interface and a reference node to initiate discharge of the signal between the interface and the reference node based on any one of a plurality of different characteristics of the signal. Discharge of the signal at the interface is initiated based on a first characteristic of the signal, and thereafter, the discharge of the signal at the interface is maintained based on another characteristic of the signal.