Abstract: A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.

Abstract: A light detection and ranging apparatus (LIDAR) includes at least one waveguide including a first cladding layer having a first refractive index and a second cladding layer having multiple second refractive indexes to expand an optical mode of an optical beam propagating within the waveguide. The second refractive indexes include a gradient of refractive indexes and the first refractive index is less than the second refractive indexes.

Abstract: A light detection and ranging apparatus (LIDAR) includes an optical source to generate an optical beam and one or more waveguides to steer the optical beam. The one or more waveguides include a first cladding layer having a first refractive index and a second cladding layer disposed below the first cladding layer, the second cladding layer having second refractive indexes including a range of different refractive indexes, wherein the range of different refractive indexes is greater than the first refractive index of the first cladding layer.

Abstract: A light detection and ranging apparatus (LIDAR) includes an optical source to generate an optical beam and one or more waveguides to steer the optical beam. The one or more waveguides include a first cladding layer having a first refractive index and a second cladding layer disposed below the first cladding layer, the second cladding layer having second refractive indexes including a range of different refractive indexes, wherein the range of different refractive indexes is greater than the first refractive index of the first cladding layer.

Abstract: A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.

Abstract: The present disclosure describes semiconductor external cavity laser with wide bandwidth frequency modulation capabilities. The laser is preferably packaged in a standard form-factor package, such as a 14-pin butterfly package. The front end of the cavity comprises an integrated planar circuit (e.g., silica-on-silicon planar lightwave circuit with Bragg gratings), and the “back facet” of the laser is implemented as a high-reflection (HR) coated LiNbO3 phase tuning section in the double pass configuration. AC-voltage signal applied to the electrodes of phase tuning section modulates a refractive index of the propagating TE-polarization mode of external cavity and produces frequency modulation. Such frequency modulation is not associated with any thermal behavior of the gain element included in the external cavity laser, and has a negligible phase delay over a wide bandwidth.

Abstract: The present disclosure describes semiconductor external cavity laser with wide bandwidth frequency modulation capabilities. The laser is preferably packaged in a standard form-factor package, such as a 14-pin butterfly package. The front end of the cavity comprises an integrated planar circuit (e.g., silica-on-silicon planar lightwave circuit with Bragg gratings), and the “back facet” of the laser is implemented as a high-reflection (HR) coated LiNbO3 phase tuning section in the double pass configuration. AC-voltage signal applied to the electrodes of phase tuning section modulates a refractive index of the propagating TE-polarization mode of external cavity and produces frequency modulation. Such frequency modulation is not associated with any thermal behavior of the gain element included in the external cavity laser, and has a negligible phase delay over a wide bandwidth.

Abstract: The present invention relates to external cavity laser (ECL) apparatuses and manufacturing processes, and more particularly to implementing low noise narrow bandwidth ECLs on planar lightwave circuit (PLC) platforms for harnessing high-performance, high-stability operation from a compact-footprint, low-power packaged device. An ECL device with narrow linewidth and low noise is disclosed, the device comprising a PLC device and a gain chip butt-coupled to each other. The PLC device has a planar Bragg grating (PBG) integrated onto a rectangular waveguide. The PLC device has anti-reflection coatings (ARC) on its input facet and output facet. The waveguide is designed to be selective of a single polarization. The gain chip has high-reflection coating (HRC) on a back facet and an ARC on a front facet. An operating wavelength of the ECL is aligned to a longer wavelength red slope of a reflectivity spectrum of the PBG. The operating wavelength may be tuned thermally, electrically, or thermo-electrically.

Abstract: The present invention relates to external cavity laser (ECL) apparatuses and manufacturing processes, and more particularly to implementing low noise narrow bandwidth ECLs on planar lightwave circuit (PLC) platforms for harnessing high-performance, high-stability operation from a compact-footprint, low-power packaged device. An ECL device with narrow linewidth and low noise is disclosed, the device comprising a PLC device and a gain chip butt-coupled to each other. The PLC device has a planar Bragg grating (PBG) integrated onto a rectangular waveguide. The PLC device has anti-reflection coatings (ARC) on its input facet and output facet. The waveguide is designed to be selective of a single polarization. The gain chip has high-reflection coating (HRC) on a back facet and an ARC on a front facet. An operating wavelength of the ECL is aligned to a longer wavelength red slope of a reflectivity spectrum of the PBG. The operating wavelength may be tuned thermally, electrically, or thermo-electrically.