Patents by Inventor Md Hossain

Md Hossain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11947268
    Abstract: A system for deep ultraviolet (DUV) optical lithography includes an optical source apparatus including N optical oscillators, N being an integer number greater than or equal to two, and each of the N optical oscillators is configured to produce a pulse of light in response to an excitation signal; and a control system coupled to the optical source apparatus. The control system is configured to determine a corrected excitation signal for a first one of the N optical oscillators based on an input signal, the input signal including an energy property of a pulse of light produced by another one of the N optical oscillators.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: April 2, 2024
    Assignee: Cymer, LLC
    Inventors: Yingbo Zhao, Md Hossain Toufiq Imam
  • Publication number: 20240050461
    Abstract: The present disclosure includes the use of a miRNA inhibitor for inducing hair growth, increasing the hair density, increasing the follicular density, increasing the hair shaft thickness, increasing hair length, preventing hair loss, reducing hair loss, or any combination thereof in a subject in need thereof. In some aspects, the subject has one or more disorders selected from the group consisting of alopecia greata, androgenic alopecia, alopecia areata, alopecia universalis, involutional alopecia, trichotillomania, telogen effluvium, anagen effluvium, cicatricial, alopecia, scarring alopecia, scalp thinning, hair shaft abnormalities, infectious hair disorders, genetic disorders, and hair loss due to chemotherapy, hormonal imbalance, fungal infection, medication intake, chemical hair treatment, or aging.
    Type: Application
    Filed: December 23, 2021
    Publication date: February 15, 2024
    Applicant: BIORCHESTRA CO., LTD.
    Inventors: Jin-Hyeob RYU, Begum SHAHNAZ, Jamil MD HOSSAIN, Hyun Su MIN, Yu Na LIM
  • Publication number: 20230019832
    Abstract: A system for deep ultraviolet (DUV) optical lithography includes an optical source apparatus including N optical oscillators, N being an integer number greater than or equal to two, and each of the N optical oscillators is configured to produce a pulse of light in response to an excitation signal; and a control system coupled to the optical source apparatus. The control system is configured to determine a corrected excitation signal for a first one of the N optical oscillators based on an input signal, the input signal including an energy property of a pulse of light produced by another one of the N optical oscillators.
    Type: Application
    Filed: December 2, 2020
    Publication date: January 19, 2023
    Inventors: Yingbo Zhao, Md Hossain Toufiq Imam
  • Publication number: 20160320923
    Abstract: A display apparatus is provided. The display apparatus includes a display, and a processor configured to control the display to provide a first graphical region having user interface elements along a radial direction in fixed positions and a second graphical region having second user interface elements along the radial direction in scrollable positions.
    Type: Application
    Filed: October 2, 2015
    Publication date: November 3, 2016
    Inventors: Imtiaz Md. HOSSAIN, Nizam Uddin AHMED, Nafiul S. M. HOSSAIN
  • Publication number: 20060189059
    Abstract: A plurality of N-doped strip portions are formed alternating with a plurality of P-doped regions. When a voltage is applied to the N-doped strip portions, a capacitance is created between the N-doped strip portions and the P-doped strip portions. A capacitance is also created between the N-doped strip portions and the underlying epitaxial silicon layer. A larger interface area between N-doped and P-doped regions generally increases the capacitance. By providing the N-doped strip portions, as opposed to a continuous N-doped region, the combined interface area between the N-doped strip portions and the underlying epitaxial silicon layer is reduced. However, more interface area is provided between the N-doped strip portions and the P-doped strip portions. A circuit simulation indicates that junction capacitance per unit peripheral length is 0.41 fF/?m, while the junction capacitance per unit area is 0.19 fF/?mˆ2.
    Type: Application
    Filed: February 23, 2005
    Publication date: August 24, 2006
    Inventors: Jung Kang, Peter Jeng, Michael DeSmith, Md Hossain, Yi-feng Liu