Patents by Inventor Md Zahid Hossain

Md Zahid Hossain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and memory device including conductive lines and contacts, and methods of forming an apparatus including conductive lines and contacts
    Patent number: 11990367
    Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: May 21, 2024
    Inventors: Xiaosong Zhang, Yongjun J. Hu, David A. Kewley, Md Zahid Hossain, Michael J. Irwin, Daniel Billingsley, Suresh Ramarajan, Robert J. Hanson, Biow Hiem Ong, Keen Wah Chow
  • PAGE BUFFER FOR MEMORY DEVICES
    Publication number: 20240064988
    Abstract: A variety of applications can include apparatus having a memory device structured with a circuit under array (CuA) architecture. A page buffer region in the CuA can be formed with a periphery region that is horizontally adjacent to the page buffer region. Contacts to gates for transistors in the page buffer region can be formed to land only on these gates, separating and electrically isolating the contacts and associated gates from each other in the page buffer region. Contacts to gates for transistors in the periphery region can be formed to land on conductive regions disposed on gates for transistors in the periphery region.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 22, 2024
    Inventors: Md Zahid Hossain, Martin Popp, Xiaosong Zhang, Surendranath C. Eruvuru, Suvra Sarkar, Tianqi Xu
  • APPARATUS INCLUDING CONDUCTIVE LINES AND CONTACTS, AND RELATED METHODS AND MEMORY DEVICES
    Publication number: 20210375670
    Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 2, 2021
    Inventors: Xiaosong Zhang, Yongjun J. Hu, David A. Kewley, Md Zahid Hossain, Michael J. Irwin, Daniel Billingsley, Suresh Ramarajan, Robert J. Hanson, Biow Hiem Ong, Keen Wah Chow
  • Apparatus comprising structures including contact vias and conductive lines, related methods, and memory devices
    Patent number: 11101171
    Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: August 24, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Xiaosong Zhang, Yongjun J. Hu, David A. Kewley, Md Zahid Hossain, Michael J. Irwin, Daniel Billingsley, Suresh Ramarajan, Robert J. Hanson, Biow Hiem Ong, Keen Wah Chow
  • APPARATUS COMPRISING STRUCTURES INCLUDING CONTACT VIAS AND CONDUCTIVE LINES, RELATED METHODS, AND MEMORY DEVICES
    Publication number: 20210050252
    Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.
    Type: Application
    Filed: August 16, 2019
    Publication date: February 18, 2021
    Inventors: Xiaosong Zhang, Yongjun J. Hu, David A. Kewley, Md Zahid Hossain, Michael J. Irwin, Daniel Billingsley, Suresh Ramarajan, Robert J. Hanson, Biow Hiem Ong, Keen Wah Chow