Patents by Inventor Medi Hamidi Sani

Medi Hamidi Sani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
    Patent number: 8004880
    Abstract: Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: August 23, 2011
    Assignee: QUALCOMM Incorporated
    Inventors: Sei Seung Yoon, Seung H Kang, Medi Hamidi Sani
  • Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
    Patent number: 7742329
    Abstract: Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: June 22, 2010
    Assignee: QUALCOMM Incorporated
    Inventors: Sei Seung Yoon, Seung H Kang, Medi Hamidi Sani
  • Read Disturb Reduction Circuit for Spin Transfer Torque Magnetoresistive Random Access Memory
    Publication number: 20080219044
    Abstract: Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations.
    Type: Application
    Filed: June 29, 2007
    Publication date: September 11, 2008
    Applicant: QUALCOMM INCORPORATED
    Inventors: Sei Seung Yoon, Seung H. Kang, Medi Hamidi Sani
  • Word Line Transistor Strength Control for Read and Write in Spin Transfer Torque Magnetoresistive Random Access Memory
    Publication number: 20080219043
    Abstract: Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.
    Type: Application
    Filed: June 29, 2007
    Publication date: September 11, 2008
    Applicant: QUALCOMM INCORPORATED
    Inventors: Sei Seung Yoon, Seung H. Kang, Medi Hamidi Sani