Patents by Inventor Medicharla Venkata Ramana Murty

Medicharla Venkata Ramana Murty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6936486
    Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.
    Type: Grant
    Filed: November 19, 2002
    Date of Patent: August 30, 2005
    Assignee: JDSU Uniphase Corporation
    Inventors: Julian Cheng, Chan-Long Shieh, Guoli Liu, Medicharla Venkata Ramana Murty
  • Publication number: 20040095978
    Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.
    Type: Application
    Filed: November 19, 2002
    Publication date: May 20, 2004
    Inventors: Julian Cheng, Chan-Long Shieh, Guoli Liu, Medicharla Venkata Ramana Murty
  • Publication number: 20040096996
    Abstract: An optical device includes a light emitting region which emits light at the wavelength of operation, the light emitting region includes at least one active region. An n-type conductivity contact region is positioned on one surface of the active region and a p-type conductivity contact region is positioned on an opposite surface. The p surface of a p/n tunnel junction is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.
    Type: Application
    Filed: May 2, 2003
    Publication date: May 20, 2004
    Inventors: Julian Cheng, Chan-Long Shieh, Guoli Liu, Medicharla Venkata Ramana Murty