Patents by Inventor Meemongkolkiat Vichai

Meemongkolkiat Vichai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120247549
    Abstract: A solar cell includes: a light absorbing layer, a semiconductor layer disposed on a first surface of the light absorbing layer, a first electrode disposed on the semiconductor layer in a first direction of the semiconductor layer, a first passivation layer disposed on a second surface of the light absorbing layer, a second passivation layer disposed on the first passivation layer in a second direction opposite to the first direction of the semiconductor layer, a contact hole disposed in the first passivation layer and the second passivation layer and exposing a portion of the light absorbing layer, and a second electrode disposed on the second passivation layer in the second direction of the second passivation layer and connected with the light absorbing layer through the contact hole. The second passivation layer is made of a compound containing carbon.
    Type: Application
    Filed: November 11, 2011
    Publication date: October 4, 2012
    Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung Jin Seo, Meemongkolkiat Vichai, Byong Gook Jeong
  • Publication number: 20120012175
    Abstract: A solar cell includes a base layer including a first conductive type impurity element, an upper surface, and a lower surface opposing the upper surface, an emitter layer disposed on the upper surface of the base layer and including a second conductive type impurity element opposing the first conductive type impurity element, a front electrode connected to the emitter layer, a first passivation layer disposed on the lower surface of the base layer, and a rear electrode disposed on the first passivation layer and connected to the base layer. The first passivation layer includes a silicon nitride group compound, and a refractive index of the silicon nitride group compound is less than about 1.96.
    Type: Application
    Filed: April 27, 2011
    Publication date: January 19, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung Jin Seo, Meemongkolkiat Vichai