Patents by Inventor Meer Nazmus Sakib

Meer Nazmus Sakib has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220221743
    Abstract: Techniques for termination for microring modulators are disclosed. In the illustrative embodiment, a microring modulator on a photonic integrated circuit (PIC) die is modulated by radiofrequency (RF) signals connected to electrodes across the microring modulator. A resistor is connected to each of the electrodes. The resistors both provide termination for the RF signals, preventing or reducing reflections, as well as forming part of a bias tee, allowing for a DC bias voltage to be applied across the electrodes.
    Type: Application
    Filed: April 1, 2022
    Publication date: July 14, 2022
    Applicant: Intel Corporation
    Inventors: Sanjeev Gupta, Olufemi I. Dosunmu, Nikolai Fediakine, Jin Hong, David Chak Wang Hui, Christian Malouin, Meer Nazmus Sakib, Jianying Zhou
  • Publication number: 20220182149
    Abstract: Embodiments herein relate to techniques for baseline wander (BLW) compensation. The technique may include identifying a data stream that is to be modulated by a ring modulator of an optical transmitter, wherein the data stream has a frequency operable to cause thermal-based BLW of an optical output of the optical transmitter. The technique may further include adjusting a time-varying direct current (DC) voltage bias of the ring modulator based on the frequency of the data stream. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 9, 2022
    Inventors: Taehwan KIM, Hao LI, Meer Nazmus SAKIB, Haisheng RONG, Ganesh BALAMURUGAN, Sanjeev GUPTA, Jin HONG, Nikolai FEDIAKINE
  • Publication number: 20220011408
    Abstract: In one embodiment, an apparatus includes: a waveguide formed of a PN junction, the waveguide to propagate optical power, the PN junction having a P region adjacent to an N region; and a silicon monitor photodetector formed of the PN junction and in-line with the waveguide to measure the optical power. The silicon monitor photodetector may further be formed of a P-doped region adjacent to the P region and an N-doped region adjacent to the N region. Other embodiments are described and claimed.
    Type: Application
    Filed: September 24, 2021
    Publication date: January 13, 2022
    Inventors: Meer Nazmus Sakib, Ranjeet Kumar, Haisheng Rong, Chaoxuan Ma
  • Publication number: 20210318561
    Abstract: A method may include: forming a base layer on a substrate; forming a waveguide assembly on the base layer, where the waveguide assembly is surrounded by a cladding layer; forming a trench opening through the cladding layer and the base layer; forming an undercut void by etching the substrate through the trench opening, where the undercut void extends under the waveguide assembly and the base layer; and filling the trench opening with a filler to seal off the undercut void. Other embodiments are described and claimed.
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Inventors: Meer Nazmus Sakib, Saeed Fathololoumi, Harel Frish, John Heck, Eddie Bononcini, Reece Defrees, Stanley J. Dobek, Aliasghar Eftekhar, Walter Garay, Lingtao Liu, Wei Qian
  • Patent number: 11143818
    Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: October 12, 2021
    Assignees: INTEL CORPORATION, REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Meer Nazmus Sakib, Guan-Lin Su, John Heck, Haisheng Rong, Ming C. Wu
  • Patent number: 11137283
    Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for a photonic apparatus with a photodetector with bias control to provide substantially constant responsivity. The apparatus includes a first photodetector, to receive an optical input and provide a corresponding electrical output; a second photodetector coupled with the first photodetector, wherein the second photodetector is free from receipt of the optical input; and circuitry coupled with the first and second photodetectors, to generate a bias voltage, based at least in part on a dark current generated by the second photodetector in an absence of the optical input, and provide the generated bias voltage to the first photodetector. The first photodetector is to provide a substantially constant ratio of the electrical output to optical input in response to the provision of the generated bias voltage. Additional embodiments may be described and claimed.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: October 5, 2021
    Assignee: Intel Corporation
    Inventors: Ganesh Balamurugan, Haisheng Rong, Meer Nazmus Sakib, Hao Li
  • Publication number: 20210175974
    Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to fully integrated optical coherent modulators on a silicon chip. These coherent modulators may be used to enable transmitters, receivers, transceivers, tunable lasers and other optical or electro-optical devices to be integrated on a silicon chip. In embodiments, the optical coherent modulators may be based on differential microring modulators that may be nested in a Mach-Zehnder Interferometer (MZI) configuration. Embodiments may also be directed to a miniaturized and fully integrated coherent modulators, which can enable terabit per second (Tbps) transceivers in a small form factor based on coherent modulation on a silicon chip. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: February 19, 2021
    Publication date: June 10, 2021
    Inventors: Aliasghar EFTEKHAR, Duanni HUANG, Meer Nazmus SAKIB, Haisheng RONG, Ansheng LIU, Peicheng LIAO, Hao LI
  • Publication number: 20210149115
    Abstract: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 23, 2020
    Publication date: May 20, 2021
    Inventors: Duanni Huang, Saeed Fathololoumi, Meer Nazmus Sakib, Mohammad Montazeri Najafabadi, Chaoxuan Ma, David Hui, Taehwan Kim, Ling Liao, Hao Li, Ganesh Balamurugan, Haisheng Rong, Aliasghar Eftekhar
  • Publication number: 20210119710
    Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 23, 2020
    Publication date: April 22, 2021
    Inventors: Meer Nazmus Sakib, Peicheng Liao, Ranjeet Kumar, Duanni Huang, Haisheng Rong, Harel Frish, John Heck, Chaoxuan Ma, Hao Li, Ganesh Balamurugan
  • Publication number: 20210006044
    Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Jin Hong, Ranjeet Kumar, Meer Nazmus Sakib, Haisheng Rong, Kimchau Nguyen, Mengyuan Huang, Aliasghar Eftekhar, Christian Malouin, Siamak Amiralizadeh Asl, Saeed Fathololoumi, Ling Liao, Yuliya Akulova, Olufemi Dosunmu, Ansheng Liu
  • Patent number: 10606004
    Abstract: Embodiments herein may relate to an optoelectronic receiver that includes a photonic integrated circuit (PIC) coupled with a light source. Respective PIC sections of the PIC may include a photodiode and a junction capacitor. The optoelectronic receiver may further include an electronic integrated circuit (EIC) coupled with the PIC. Respective EIC sections of the EIC may be communicatively coupled to respective ones of the PIC sections. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: March 31, 2020
    Assignee: Intel Corporation
    Inventors: Jahnavi Sharma, Ganesh Balamurugan, Hao Li, Meer Nazmus Sakib, Haisheng Rong
  • Publication number: 20190324210
    Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 24, 2019
    Inventors: Meer Nazmus Sakib, Guan-Lin Su, John Heck, Haisheng Rong, Ming C. Wu
  • Publication number: 20190257688
    Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for a photonic apparatus with a photodetector with bias control to provide substantially constant responsivity. The apparatus includes a first photodetector, to receive an optical input and provide a corresponding electrical output; a second photodetector coupled with the first photodetector, wherein the second photodetector is free from receipt of the optical input; and circuitry coupled with the first and second photodetectors, to generate a bias voltage, based at least in part on a dark current generated by the second photodetector in an absence of the optical input, and provide the generated bias voltage to the first photodetector. The first photodetector is to provide a substantially constant ratio of the electrical output to optical input in response to the provision of the generated bias voltage. Additional embodiments may be described and claimed.
    Type: Application
    Filed: May 3, 2019
    Publication date: August 22, 2019
    Inventors: Ganesh Balamurugan, Haisheng Rong, Meer Nazmus Sakib, Hao Li
  • Publication number: 20190049680
    Abstract: Embodiments herein may relate to an optoelectronic receiver that includes a photonic integrated circuit (PIC) coupled with a light source. Respective PIC sections of the PIC may include a photodiode and a junction capacitor. The optoelectronic receiver may further include an electronic integrated circuit (EIC) coupled with the PIC. Respective EIC sections of the EIC may be communicatively coupled to respective ones of the PIC sections. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: June 1, 2018
    Publication date: February 14, 2019
    Applicant: Intel Corporation
    Inventors: Jahnavi Sharma, Ganesh Balamurugan, Hao Li, Meer Nazmus Sakib, Haisheng Rong
  • Patent number: 9281902
    Abstract: Broadband access networks are driving the upgrade of DWDM networks from 10 Gb/s per channel to more spectrally-efficient 40 Gb/s or 100 Gb/s. Signal quality degradation due to linear and non-linear impairments are significant and error control coding and signal processing solutions play increasingly key roles in meeting increasing demand, providing improved quality of service, and reduced cost. It would be beneficial to reduce the power consumption of optical receivers for optical links exploiting for example LPDC encoding. Accordingly, the inventors have established a low complexity soft-decision front-end compatible with deployable LDPC codes in next-generation optical transmission systems. Beneficially the optical receiver design can be retro-fitted into deployed hard-decision based optical systems and replaces the 3-to-2 encoder of the prior art in the electrical portion of the receiver with a single gate design. Further, the design may act as a 2-bit Flash ADC in multimode fiber based optical receivers.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: March 8, 2016
    Assignee: The Royal Institution for the Advancement of Learning/ McGill University
    Inventors: Odile Liboiron-Ladouceur, Meer Nazmus Sakib