Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.

Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.

Abstract: A combination of photovoltaic devices and solid state batteries. The solid state battery comprising at least one negative electrode which may include a metal hydride active material, at least one positive electrode including an active material, and an anionic exchange membrane disposed between said negative electrode and said positive electrode. The anionic exchange membrane may be selected from materials allowing the flow of hydroxyl ions therethrough while simultaneously electrically separating the positive and negative electrodes. The anionic exchange membrane may be selected from a number of different materials based on different chemistries which allow the flow of hydroxyl ions therethrough. The anionic exchange membrane may be comprised of a polystyrene-divinylbenzene-polyvinylchloride polymeric material. The photovoltaic devices may be amorphous silicon solar cells. The photovoltaic devices may be triple junction, tandem amorphous silicon solar cells.

Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.

Abstract: A solid state battery utilizing an anionic ion exchange membrane solid electrolyte. The solid electrolyte is used to replace the separator and the liquid electrolyte typically utilized in batteries. The solid electrolyte may be a polymeric material allowing the transfer of hydroxyl ions therethrough.

Abstract: A complex aluminum hydride doped with a catalytic material adapted to increase the kinetics of hydrogen absorption/desorption of the aluminum hydride without reducing the hydrogen storage capacity of the aluminum hydride.

Abstract: A complex aluminum hydride doped with a catalytic material adapted to increase the kinetics of hydrogen absorption/desorption of the aluminum hydride without reducing the hydrogen storage capacity of the aluminum hydride.

Abstract: An active material for a negative electrode used in an electrochemical cell comprising a highly active, high surface area hydrogen storage material alloy which provides for high power output, fast activation, increased cycle life, and a hydrogen precharge in-situ. The highly active, high surface area hydrogen storage material is formed by first forming an alloy of a hydrogen storage alloy and aluminum and leaching the aluminum out of the alloy.

Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.

Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.

Abstract: A hydrogen storage alloy active material for the negative electrode of an electrochemical cell. The active material includes a hydrogen storage alloy material with a water reactive chemical hydride additive, which, upon utilization of the active material in a negative electrode of an electrochemical cell, gives the negative electrode added benefits, not attainable by using hydrogen storage alloy material alone. These added benefits include 1) precharge of the hydrogen storage material with hydrogen; 2) higher porosity/increased surface area/reduced electrode polarization at high currents; 3) simplified, faster activation of the hydrogen storage alloy; and 4) optionally, enhanced corrosion protection for the hydrogen storage alloy.

Abstract: A method of forming a large area electronic element, e.g., a large area integrated microelectronic circuit which has at least one dimension in excess of three inches, by forming a film of photoresist separate from a surface to be etched, and thereafter depositing the film of photoresist on the surface to be etched. The deposited photoresist film is then exposed to actinic radiation and developed, and the exposed, underlying surface may thereafter be etched.The method for depositing the photoresist involves passing a viscous liquid composed of photoresist and solvent under positive pressure through a very thin elongated orifice that extends across and in close proximity to (e.g., 0.01 inch or less), but spaced apart from the surface to be processed to form a very thin flexible continuous film of liquid photoresist composition issuing from the orifice.

Abstract: Thin film semiconductor devices such as amorphous silicon alloy p-i-n diodes and the like which utilize mesa-like semiconductor structures having vertical sidewalls are formed by a process which eliminates overhangs and neutralizes contaminants on the sidewalls that can result in short circuits or degradation of device performance. Smooth vertical sidewalls free of overhangs and voids are created by: successively depositing the desired semiconductor layers on a substrate, then depositing and patterning a top metal contact mask on the semiconductor layers, followed by removing the unwanted portions of the semiconductor layers by reactive ion etching. The disclosed reactive ion etching provides controlled vertical etching with virtually no lateral etching, thereby providing smooth sidewalls.

Abstract: Light influencing displays and more particularly liquid crystal displays are disclosed which have a pair of light transmissive electrode supports which are uniformly spaced apart by a predetermined distance over the entire display area. The electrode supports are spaced apart by spacer means including a plurality of spacers arranged in a predetermined pattern between the electrode supports.

Abstract: A new and improved thin film field effect transistor has increased operating current and speed. The transistor includes a drain, an insulator, and a source formed in layers and vertically arranged with respect to a substrate and each other. The drain, however, and source layers form a plurality of non-coplanar surfaces with respect to the substrate. The device further includes a deposited semiconductor material overlying the non-coplanar surfaces to form a plurality of current conduction channels between the drain and source. A gate insulator overlies the semiconductor material, and a gate electrode overlies the gate insulator. The devices can also include carrier injection structure including a doped semiconductor material electrically coupled to the drain, the source, and the deposited semiconductor material for increasing the injection of current conduction carriers in the current conduction channels.

Abstract: A method of making a high performance, small area thin film transistor having a drain region, an insulating layer, and a source region forming a non-coplanar surface with respect to a substrate is disclosed. The insulative layer is formed in between the source and drain regions. A deposited semiconductor overlies the non-coplanar surface to form a current conduction channel between the drain and source. A gate insulator and gate electrode overly at least a portion of the deposited semiconductor adjacent thereto. The non-coplanar surface can be formed by utilizing a dry process to simultaneously etch through several layers in a continuous one-step process. A second dielectric layer may be formed above the three previous layers. This decouples the gate electrode from the source region by creating two capacitances in series, thereby limiting the capacitance between the gate electrode and the source region.