Patents by Inventor Megan J. Snook

Megan J. Snook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Guard ring structures and method of fabricating thereof
    Patent number: 8138569
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: March 20, 2012
    Assignee: Northrop Grumman Systems Corporation
    Inventors: John Victor D. Veliadis, Megan J. Snook
  • Guard ring structures and method of fabricating thereof
    Patent number: 8018022
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: September 13, 2011
    Assignee: Northrop Grumman Systems Corporation
    Inventors: John Victor D. Veliadis, Megan J. Snook
  • GUARD RING STRUCTURES AND METHOD OF FABRICATING THEREOF
    Publication number: 20110049666
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Application
    Filed: October 7, 2010
    Publication date: March 3, 2011
    Applicant: Northrop Grumman Systems Corporation
    Inventors: John Victor D. VELIADIS, Megan J. Snook
  • GUARD RIND STRUCTURES AND METHOD OF FABRICATING THEREOF
    Publication number: 20110042776
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Application
    Filed: October 7, 2010
    Publication date: February 24, 2011
    Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: JOHN VICTOR D. VELIADIS, MEGAN J. SNOOK
  • Guard ring structures and method of fabricating thereof
    Patent number: 7825487
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: November 2, 2010
    Assignee: Northrop Grumman Systems Corporation
    Inventors: John Victor D. Veliadis, Megan J. Snook
  • Guard ring structures and method of fabricating thereof
    Publication number: 20100078754
    Abstract: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Inventors: John Victor Veliadis, Megan J. Snook