Abstract: The present disclosure pertains to facilitating sleep improvement for a user. In a non-limiting embodiment, user data associated with a sleep session of a user is received from one or more sensors. Based on the user data, one or more sleep metrics associated with the sleep session are generated. One or more reference sleep metrics are determined based on prior user data obtained from one or more prior sleep sessions. One or more immediate values related to the sleep session is/are determined based on a comparison of the sleep metrics with the reference sleep metrics. A sleep session score value is generated based on the immediate values, and the sleep session score value and the sleep metrics are caused to be presented on via an output device.

Abstract: The present disclosure pertains to facilitating sleep improvement for a user. In a non-limiting embodiment, user data associated with a sleep session of a user is received from one or more sensors. Based on the user data, one or more sleep metrics associated with the sleep session are generated. One or more reference sleep metrics are determined based on prior user data obtained from one or more prior sleep sessions. One or more immediate values related to the sleep session is/are determined based on a comparison of the sleep metrics with the reference sleep metrics. A sleep session score value is generated based on the immediate values, and the sleep session score value and the sleep metrics are caused to be presented on via an output device.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of pattern collapse defects on a plurality of photoresist coated substrates during the manufacture of semiconductor devices.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Disclosed herein are process solutions, which may be aqueous-based, non-aqueous-based, and combinations thereof, that contain at least one alkoxylated acetylenic diol surfactant. In one aspect, the process solution comprises water and an alkoxylated acetylenic diol surfactant having the formula A: where r and t are 1 or 2, (n+m) is 1 to 30 and (p+q) is 1 to 30.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Process solutions comprising one or more acetylenic diol type surfactants are used to improve the wettability of a substrate surface by lowering the contact angle of the aqueous developer solution are enclosed herein. In one embodiment, the process solution is used to prepare the surface of the substrate prior to the development of the resist coating layer.

Abstract: Process solutions comprising one or more acetylenic diol type surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects by improving the wetting of the solution on the surface of the patterned photoresist layer while minimizing foaming and bubble generation.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: Aqueous solutions comprising one or more acetylenic diol type surfactants are used to improve the wettability of a substrate surface by lowering the contact angle of the aqueous developer solution are enclosed herein. In one embodiment, the aqueous solution is used to prepare the surface of the substrate prior to development of the resist coating layer.