Abstract: An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer.

Abstract: A method is provided for bonding a die to a base technology wafer and includes: providing a device wafer having a front, back, at least one side, and at least one TSV, wherein the back contains a substrate material; providing a carrier wafer having a front, back, and at least one side; bonding the wafers using an adhesive; removing the substrate material and wet etching, from the device wafer's back side, to expose at least one metallization scheme feature; processing the device wafer's back side to create at least one backside redistribution layer; removing the device wafer from the carrier wafer; dicing the device wafer into individual die; providing a base technology wafer; coating the front of the base technology wafer with a sacrificial adhesive; placing the front of the individual die onto the front of the base technology wafer; and bonding the individual die to the base technology wafer.

Abstract: An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer.

Abstract: A method is provided for bonding a die to a base technology wafer and includes: providing a device wafer having a front, back, at least one side, and at least one TSV, wherein the back contains a substrate material; providing a carrier wafer having a front, back, and at least one side; bonding the wafers using an adhesive; removing the substrate material and wet etching, from the device wafer's back side, to expose at least one metallization scheme feature; processing the device wafer's back side to create at least one backside redistribution layer; removing the device wafer from the carrier wafer; dicing the device wafer into individual die; providing a base technology wafer; coating the front of the base technology wafer with a sacrificial adhesive; placing the front of the individual die onto the front of the base technology wafer; and bonding the individual die to the base technology wafer.