Abstract: A function restriction method includes, by a computer, acquiring user information about a user for an establishment provided with a device or equipment, the user information including a level of cognitive faculty of the user, determining a restriction item to a function of the device or the equipment provided in the establishment with reference to a rule that restricts the function of the device or the equipment according to the level of the user, and outputting information indicative of the restriction item.

Abstract: A test jig is for testing electrical characteristics of a high frequency semiconductor device in a package having a ground electrode and a high frequency signal electrode. The test jig includes a test circuit substrate with a microstrip line structure, a grounding block and a high frequency signal contact pin. The test circuit substrate includes an insulating substrate, a ground conductor on a bottom surface of the insulating substrate and high frequency signal wiring on a top surface of the insulating substrate. The grounding block is disposed on the top surface of the insulating substrate and connected to the ground conductor. The high frequency signal contact pin is disposed on the top surface of the insulating substrate and connected to the high frequency signal wiring. The high frequency signal contact pin is spaced from the grounding block.

Abstract: A test jig is for testing electrical characteristics of a high frequency semiconductor device in a package having a ground electrode and a high frequency signal electrode. The test jig includes a test circuit substrate with a microstrip line structure, a grounding block and a high frequency signal contact pin. The test circuit substrate includes an insulating substrate, a ground conductor on a bottom surface of the insulating substrate and high frequency signal wiring on a top surface of the insulating substrate. The grounding block is disposed on the top surface of the insulating substrate and connected to the ground conductor. The high frequency signal contact pin is disposed on the top surface of the insulating substrate and connected to the high frequency signal wiring. The high frequency signal contact pin is spaced from the grounding block.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t?r?35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 ?m to 30 ?m and larger than that of the second curved surface.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t?r?35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 ?m to 30 ?m and larger than that of the second curved surface.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t?r?35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 ?m to 30 ?m and larger than that of the second curved surface.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t?r?35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 ?m to 30 ?m and larger than that of the second curved surface.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: ?=cos?1(1?t/R)?15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is ?, the probe have a flat portion at an end of the tip portion.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: The present invention provides a member for removing foreign matter adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, a first elastic member on the base plate and flexibly deformable upon contact of the probe, specifically, a predetermined Young's modulus, a second elastic member on the first elastic member and having a tensile strength and a thickness responding to contact stress produced by the contact of the probe, and an abrasive layer on the second elastic member and made of hard particles and a binding material in a volume ratio providing a smooth sliding action of the probe and producing a high abrasive efficiency to any adhering foreign matter. The removing member can smoothly slide the probe to effectively remove the foreign matter adhering to the probe tip.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: &thgr;=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t≦r≦23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.

Abstract: A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: The present invention provides a member for removing foreign matters adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, the first elastic member formed on the base plates and having a material property of flexible deformation by the contact of the probe, specifically, a predetermined Young's modulus, the second elastic member formed on the first elastic member and having a tensile strength and a film thickness capable of responding to a contact stress produced by the contact of the probe, and an abrasive layer formed on the second elastic member and made of hard particles and a binding material which are mixed at a predetermined volume ratio to realize a smooth sliding action of the probe and producing a high abrasive efficiency of the foreign adhering matters.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.