Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Abstract: A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

Abstract: A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Abstract: A magnetic memory according to an embodiment includes: an electrode including a lower face, an upper face opposed to the lower face, and a side face different from the lower and upper faces; a magnetoresistive element disposed on the upper face of the electrode, including a multilayer structure including a first magnetic layer disposed above the upper face of the electrode, a second magnetic layer disposed between the upper face of the electrode and the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a first insulating film disposed on the side face of the electrode; and a second insulating film including a first portion disposed on a side face of the multilayer structure of the magnetoresistive element, and a second portion, the first insulating film being disposed between the second portion and the side face of the electrode.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.

Abstract: A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.

Abstract: A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.

Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

Abstract: A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.