Abstract: An optoelectronic device including an array of axial light-emitting diodes. The light-emitting diodes each include an active area configured to emit an electromagnetic radiation having an emission spectrum including a maximum at a first wavelength. The array forms a photonic crystal configured to be able to form three resonance peaks amplifying the intensity of said electromagnetic radiation at at least second, third, and fourth wavelengths.

Abstract: An optoelectronic device including an array of axial light-emitting diodes, the light-emitting diodes each including an active area configured to emit an electromagnetic radiation having an emission spectrum comprising a maximum at a first wavelength, the array forming a photonic crystal configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least one second wavelength different from the first wavelength.

Abstract: An optoelectronic device including a matrix of axial light-emitting diodes (LEDs). Each LED includes an active layer emitting electromagnetic radiation. The matrix forms a photonic crystal having at least first and second resonant peaks in a plane containing the active layers, each first and second peak amplifying the radiation intensity at a first and second wavelength respectively. Each light emitting diode includes an elongated semiconductor element, having a first portion of a first average diameter, a second portion extending the first portion and having a cross-sectional area decreasing away from the first portion, and the active layer extending the second portion and having a second average diameter strictly less than the first average diameter, the active layers being located at the first peak locations and absent at the secondary peak locations.

Abstract: An optoelectronic device including an array of axial light-emitting diodes (LED), each including an active area configured to emit electromagnetic radiation whose emission spectrum includes a maximum at a first wavelength. The device further includes a cladding for each LED, transparent to said radiation of a first material surrounding the sidewalls of the LED over at least a portion of the LED, each cladding having a thickness greater than 10 nm. The device further comprises layer, between the claddings, transparent to said radiation, made of a second material different from the first material, the second material being electrically insulating, the array forming a photonic crystal.

Abstract: An optoelectronic device including first, second, and third three-dimensional light-emitting diodes having an axial configuration. Each light-emitting diode includes a semiconductor element and an active region resting on the semiconductor element. Each semiconductor element corresponds to a microwire, a nanowire, a nanometer- or micrometer-range conical or frustoconical element. The first, second, and third light-emitting diodes are configured to respectively emit first, second, and third radiations at first, second, and third wavelengths. The semiconductor elements of the first, second, and third light-emitting diodes respectively have first, second, and third diameters. The first diameter is smaller than the second diameter and the second diameter is smaller than the third diameter, the first wavelength being greater than the third wavelength and the second wavelength being greater than the first wavelength.

Abstract: A device configured for a laser treatment including a substrate transparent for the laser and objects, each object being bonded to the substrate via a photonic crystal.

Abstract: A device configured for a treatment with a laser, including a support transparent for the laser and at least one optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered with an active layer, the three-dimensional semiconductor element including a base bonded to the support, the device including a region absorbing for the laser resting on the support and surrounding the base.