Patents by Inventor Mehmet Ozturk
Mehmet Ozturk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11362252Abstract: Various examples of thin film thermoelectric (TE) devices, their fabrication and applications are presented. In one example, a thin film TE device includes a first substrate including a void; a p-type TE element attached to the first substrate at a first end and extending over the void to a second end; an n-type TE element attached to the first substrate at a first end and extending over the void to a second end adjacent to the second end of the p-type TE element; and an interconnection coupling the second ends of the p-type TE element and the n-type TE element. In some examples, TE device layers can be vacuum sealed between a supporting substrate and a transparent substrate. A thermal spreader can include TE modules having a distribution of TE elements that operate in generating or cooling modes to cool IC or device hotspots using self-generated power.Type: GrantFiled: May 25, 2018Date of Patent: June 14, 2022Assignee: North Carolina State UniversityInventors: Daryoosh Vashaee, Jie Liu, Mehmet Ozturk
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Publication number: 20200152848Abstract: Various examples of thin film thermoelectric (TE) devices, their fabrication and applications are presented. In one example, a thin film TE device includes a first substrate including a void; a p-type TE element attached to the first substrate at a first end and extending over the void to a second end; an n-type TE element attached to the first substrate at a first end and extending over the void to a second end adjacent to the second end of the p-type TE element; and an interconnection coupling the second ends of the p-type TE element and the n-type TE element. In some examples, TE device layers can be vacuum sealed between a supporting substrate and a transparent substrate. A thermal spreader can include TE modules having a distribution of TE elements that operate in generating or cooling modes to cool IC or device hotspots using self-generated power.Type: ApplicationFiled: May 25, 2018Publication date: May 14, 2020Inventors: Daryoosh Vashaee, Jie Liu, Mehmet Ozturk
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Publication number: 20190362359Abstract: The present invention relates to a system for enabling persons who are or are not subscribers of institutions making financial transaction to realize person authentication by means of fingerprint and/or retina information and/or face detection in order to carry out transaction over financial institution. The inventive system consists of mobile device, financial institution unit, identity authentication unit and authentication server.Type: ApplicationFiled: December 21, 2017Publication date: November 28, 2019Applicant: TURKCELL TEKNOLOJI ARASTIRMA VE GELISTIRME ANONIM SIRKETIInventors: Mehmet ÖZTÜRK, Emrah KARADERE, Ay?e Hantan SARI
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Patent number: 10431726Abstract: Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.Type: GrantFiled: May 2, 2017Date of Patent: October 1, 2019Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Michael D. Dickey, Collin Ladd, Dishit Paresh Parekh, Viswanath Padmanabhan Ramesh, Francisco Suarez
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Publication number: 20170317261Abstract: Flexible thermoelectric generators and methods of manufacturing are disclosed. In one embodiment, a flexible thermoelectric generator includes a plurality of pillars, a first and a second plurality of flexible interconnects, and a flexible material. The plurality of pillars having a first side and a second side. The first plurality of flexible interconnects electrically connecting pairs of the plurality of pillars on the first side. The second plurality of flexible interconnects electrically connecting the pairs of plurality of pillars on the second side. The first and the second plurality of flexible interconnects alternate among the pairs of plurality of pillars to form an electrical circuit having a first end and a second end. The flexible material covering the first and second plurality of flexible interconnects and having an external surface. The flexible material is configured to conduct thermal energy from the external surface to the plurality of pillars.Type: ApplicationFiled: May 2, 2017Publication date: November 2, 2017Inventors: Mehmet Ozturk, Michael D. Dickey, Collin Ladd, Dishit Paresh Parekh, Viswanath Padmanabhan Ramesh, Francisco Suarez
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Patent number: 7265375Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: GrantFiled: February 24, 2005Date of Patent: September 4, 2007Assignee: North Carolina State UniversityInventors: Zhibo Zhang, Veena Misra, Salah M. A. Bedair, Mehmet Ozturk
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Patent number: 7211458Abstract: A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers to extend onto the insulating layer between the second semiconductor layers. The second semiconductor layers have a lattice constant that is different than that of the first semiconductor layer, such that strain may be created in the first semiconductor layer. Related devices are also discussed.Type: GrantFiled: August 8, 2005Date of Patent: May 1, 2007Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Veena Misra, Saurabh Chopra
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Publication number: 20070029553Abstract: A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers to extend onto the insulating layer between the second semiconductor layers. The second semiconductor layers have a lattice constant that is different than that of the first semiconductor layer, such that strain may be created in the first semiconductor layer. Related devices are also discussed.Type: ApplicationFiled: August 8, 2005Publication date: February 8, 2007Inventors: Mehmet Ozturk, Veena Misra, Saurabh Chopra
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Publication number: 20050156180Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: ApplicationFiled: February 24, 2005Publication date: July 21, 2005Inventors: Zhibo Zhang, Veena Misra, Salah Bedair, Mehmet Ozturk
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Patent number: 6914256Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: GrantFiled: January 20, 2004Date of Patent: July 5, 2005Assignee: North Carolina State UniversityInventors: Zhibo Zhang, Veena Misra, Salah M. A. Bedair, Mehmet Ozturk
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Publication number: 20040144985Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: ApplicationFiled: January 20, 2004Publication date: July 29, 2004Inventors: Zhibo Zhang, Veena Misra, Salah M. A. Bedair, Mehmet Ozturk
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Patent number: 6709929Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: GrantFiled: June 24, 2002Date of Patent: March 23, 2004Assignee: North Carolina State UniversityInventors: Zhibo Zhang, Veena Misra, Salah M. A. Bedair, Mehmet Ozturk
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Publication number: 20030010971Abstract: Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm.Type: ApplicationFiled: June 24, 2002Publication date: January 16, 2003Inventors: Zhibo Zhang, Veena Misra, Salah M. A. Bedair, Mehmet Ozturk
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Patent number: 6071705Abstract: This invention relates to a method of detecting and diagnosing neurological disease or dysfunction using antibodies against a neurological form of Pancreatic Thread Protein (nPTP). Specifically, this invention is directed to a method of diagnosing Alzheimer's Disease, Down's Syndrome, and other neurological diseases or dysfunctions by using monoclonal antibodies, combination of those monoclonal antibodies or nucleic acid probes, to detect nPTP. The invention also relates to a recombinant DNA molecule encoding PTP and to the substantially pure form of nPTP. The invention additionally relates to a method of diagnosing pancreatic disease using antibodies against Pancreatic Thread Protein.Type: GrantFiled: June 6, 1995Date of Patent: June 6, 2000Assignee: The General Hospital CorporationInventors: Jack R. Wands, Jerome Gross, Mehmet Ozturk, Suzanne de la Monte
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Patent number: 5250452Abstract: The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.Type: GrantFiled: June 19, 1991Date of Patent: October 5, 1993Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Jimmie Wortman
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Patent number: 5162246Abstract: The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the gate form a silicon surface. The gate structure includes a surface material upon which germanium will not deposit at a temperature that is otherwise high enough to cause germanium to deposit from a germanium containing gas onto a silicon surface, but that is lower than the temperature at which germanium will deposit on the gate surface material. A source and drain are formed in the silicon substrate in the portions adjacent the gate by adding dopant atoms and in which the source and drain are separated by an active region of the silicon substrate defined by the gate structure.Type: GrantFiled: November 8, 1991Date of Patent: November 10, 1992Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Jimmie Wortman, Douglas Grider
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Patent number: 5101247Abstract: The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.Type: GrantFiled: April 27, 1990Date of Patent: March 31, 1992Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Jimmie Wortman
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Patent number: 5089872Abstract: The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the gate form a silicon surface. The gate structure includes a surface material upon which germanium will not deposit at a temperature that is otherwise high enough to cause germanium to deposit from a germanium containing gas onto a silicon surface, but that is lower than the temperature at which germanium will deposit on the gate surface material. A source and drain are formed in the silicon substrate in the portions adjacent the gate by adding dopant atoms and in which the source and drain are separated by an active region of the silicon substrate defined by the gate structure.Type: GrantFiled: April 27, 1990Date of Patent: February 18, 1992Assignee: North Carolina State UniversityInventors: Mehmet Ozturk, Jimmie Wortman, Douglas Grider
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Patent number: 4933275Abstract: A method for the determination of a free protein subunit of a quaternary protein in a sample, which comprises:(a) contacting a sample with a first immunological binding partner which is or will be bound to a carrier, wherein the first immunological binding partner binds epitopic determinants bindable only on the free protein subunit;(b) incubating the components of step (a) for a period of time and under conditions sufficient to form an immune complex between the free protein subunit, the first immunological binding partner, and the carrier;(c) separating the carrier of step (b) from the sample;(d) adding to the carrier of step (c), a detectably-labeled second immunological binding partner, wherein the second immunological binding partner binds epitopic determinants bindable on both the free protein subunit and the quaternary protein; and(e) determining the detectably-labeled second immunological binding partner in the carrier or in liquid phase.Type: GrantFiled: October 24, 1985Date of Patent: June 12, 1990Assignee: The General Hospital CorporationInventors: Jack R. Wands, Mehmet Ozturk, Dominique Bellet
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Patent number: 4804626Abstract: A highly sensitive and specific monoclonal-immuno-radiometric assay (M-IRMA) for hCG, using monoclonal antibodies (Mabs) directed against a 37-amino acid synthetic polypeptide analogous to the carboxyl terminus (CTP) of beta-hCG. Accordingly, in one embodiment, a method is described for the determination of human chorionic gonadotrThe present invention was made utilizing funds of the United States Government. The U.S. government is therefore granted a royalty-free, non-exclusive, world wide, paid-up license in this invention.Type: GrantFiled: October 22, 1986Date of Patent: February 14, 1989Assignee: The General Hospital CorporationInventors: Dominique Bellet, Jack R. Wands, Mehmet Ozturk