Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

Abstract: A method of forming a structure on a substrate, includes forming a nucleation layer within an opening of the substrate within a processing chamber. The method further includes forming a passivation layer on at least a portion of the nucleation layer by introducing radical treatment into the processing chamber. The method further includes forming a tungsten fill layer within the opening over the passivation layer and the nucleation layer, wherein the tungsten fill layer is formed by a plurality of treatment cycles. Each treatment cycle includes pulsing a first gas at the substrate for a pulse time duration while concurrently flowing a second gas over the substrate, and purging the first gas and the second gas by flowing a purge gas over the substrate for a purge time duration.

Abstract: Methods and apparatus for lamp housing crack detection are provided herein. For example, a method associated with a process chamber having a lamp housing comprises sequentially processing a plurality of substrates in the process chamber, during processing of the plurality of substrates, collecting lamp housing data indicative of a fluid leak in the lamp housing from a sensor operably connected to the lamp housing of the process chamber, determining from the lamp housing data whether lamp housing crack is present, and responsive to determining lamp housing crack is present, at least one of triggering an alert or stopping processing of the process chamber.

Abstract: Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process volume and a vacuum chuck support is disposed within the process volume. A pressure controller is disposed on a fluid flow path upstream from the vacuum chuck and a flow restrictor is disposed on the fluid flow path downstream from the vacuum chuck. Each of the pressure controller and flow restrictor are in fluid communication with a control volume of the vacuum chuck.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. One or more calibration temperature measurements of the area of the substrate support are taken by the temperature sensor and simultaneously one or more calibration resistance measurements of the resistive coil are taken corresponding to each calibration temperature measurement. Temperature control of a heating element disposed in the substrate support is calibrated based on the calibration temperature and calibration resistance measurements.

Abstract: A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

Abstract: In one aspect, a valve assembly adapted to seal an opening in a chamber is disclosed. Valve assembly includes a housing being adapted for coupling to a chamber surface having the opening therein, the housing including a threshold portion positioned adjacent to the chamber opening, the threshold portion having one or more inlets adapted to supply gas to an interior region of the housing adjacent to the chamber opening; and a sealing surface adapted to selectively (1) seal the opening, and (2) retract from the opening so as not to obstruct substrate passage. Numerous other system aspects are provided, as are methods and computer program products in accordance with these and other aspects.

Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. One or more calibration temperature measurements of the area of the substrate support are taken by the temperature sensor and simultaneously one or more calibration resistance measurements of the resistive coil are taken corresponding to each calibration temperature measurement. Temperature control of a heating element disposed in the substrate support is calibrated based on the calibration temperature and calibration resistance measurements.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process volume and a vacuum chuck support is disposed within the process volume. A pressure controller is disposed on a fluid flow path upstream from the vacuum chuck and a flow restrictor is disposed on the fluid flow path downstream from the vacuum chuck. Each of the pressure controller and flow restrictor are in fluid communication with a control volume of the vacuum chuck.