Patents by Inventor Mei-Chi Wang

Mei-Chi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of removing residue left after plasma process
    Patent number: 7687446
    Abstract: A method of removing the residue left after a plasma process is described. First, a substrate having at least a material layer thereon is provided. The material layer includes a metal. Then, a fluorine-containing plasma process is performed so that a residue containing the aforesaid metallic material is formed on the surface of the material layer. After that, a wet cleaning operation is performed using a cleaning agent to remove the residue. The cleaning agent is a solution containing water, a diluted hydrofluoric acid and an acid solution.
    Type: Grant
    Filed: February 6, 2006
    Date of Patent: March 30, 2010
    Assignee: United Microelectronics Corp.
    Inventors: Cheng-Ming Weng, Miao-Chun Lin, Mei-Chi Wang, Jiunn-Hsiung Liao, Wei-Cheng Yang
  • CLEANING AGENT AND METHOD OF REMOVING RESIDUE LEFT AFTER PLASMA PROCESS
    Publication number: 20070184996
    Abstract: A method of removing the residue left after a plasma process is described. First, a substrate having at least a material layer thereon is provided. The material layer includes a metal. Then, a fluorine-containing plasma process is performed so that a residue containing the aforesaid metallic material is formed on the surface of the material layer. After that, a wet cleaning operation is performed using a cleaning agent to remove the residue. The cleaning agent is a solution containing water, a diluted hydrofluoric acid and an acid solution.
    Type: Application
    Filed: February 6, 2006
    Publication date: August 9, 2007
    Inventors: Cheng-Ming Weng, Miao-Chun Lin, Mei-Chi Wang, Jiunn-Hsiung Liao, Wei-Cheng Yang