Patents by Inventor Mei Chou
Mei Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948971Abstract: A method includes forming isolations extending into a semiconductor substrate, recessing the isolation regions, wherein a semiconductor region between the isolation regions forms a semiconductor fin, forming a first dielectric layer on the isolation regions and the semiconductor fin, forming a second dielectric layer over the first dielectric layer, planarizing the second dielectric layer and the first dielectric layer, and recessing the first dielectric layer. A portion of the second dielectric layer protrudes higher than remaining portions of the first dielectric layer to form a protruding dielectric fin. A portion of the semiconductor fin protrudes higher than the remaining portions of the first dielectric layer to form a protruding semiconductor fin. A portion of the protruding semiconductor fin is recessed to form a recess, from which an epitaxy semiconductor region is grown. The epitaxy semiconductor region expands laterally to contact a sidewall of the protruding dielectric fin.Type: GrantFiled: August 10, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Wei Yu, Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu
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Publication number: 20240075514Abstract: A rotary cable arranging tool is disclosed. The rotary cable arranging tool is used for untwisting a first and a second cable. The rotary cable arranging tool includes a first annular structure, a first and a second assembly member, and a first and a second hole. The first and the second holes are assembled by the cooperation of the first and the second assemblies so as to be pressed to change a width of an inner diameter. When the first and second cables are in a twisted state, the first and second assemblies are counter-rotated together, so that the first and the second cables are untwisted and enter the first and second holes respectively. Then the first and second holes are tightly combined with the first and second cables, and the first and the second cable are pulled out to be straightened.Type: ApplicationFiled: February 3, 2023Publication date: March 7, 2024Inventors: Chien-Chou Liao, Mei-Fang Lin
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Publication number: 20220310894Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.Type: ApplicationFiled: March 17, 2022Publication date: September 29, 2022Inventors: Hsin-Chuan WANG, Tzong-Liang TSAI, Hsiu-Mei CHOU, Chin-Hung LUO
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Publication number: 20210257316Abstract: A method includes forming signal lines in a pair of neighboring metal layers of a semiconductor device, and forming first dummy conductive cells in an empty area without metal lines passing therethrough, between the pair of neighboring metal layers. At least two dummy conductive cells of the first dummy conductive cells that are separated from each other, and the at least two dummy conductive cells fully overlap one of the signal lines in plan view.Type: ApplicationFiled: April 23, 2021Publication date: August 19, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yu MA, Hui-Mei CHOU, Kuo-Ji CHEN
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Patent number: 10991663Abstract: A method is disclosed and includes forming a plurality of dummy conductive cells that provides different densities in empty areas in metal layers of a semiconductor device according to overlap conditions of the empty areas each arranged between a pair of neighboring metal layers of metal layers. Forming the plurality of dummy conductive cells includes operations of forming a group of dummy conductive cells in a single empty area of the empty areas when the single empty area in one pair of the neighboring metal layers is overlapped by a signal line in the same pair of the neighboring metal layers. When viewed in plan view, projection areas of the group of dummy conductive cells are vertically overlapped by a projection area of the signal line. A semiconductor device is also disclosed herein.Type: GrantFiled: December 13, 2019Date of Patent: April 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yu Ma, Hui-Mei Chou, Kuo-Ji Chen
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Publication number: 20200118948Abstract: A method is disclosed and includes forming a plurality of dummy conductive cells that provides different densities in empty areas in metal layers of a semiconductor device according to overlap conditions of the empty areas each arranged between a pair of neighboring metal layers of metal layers. Forming the plurality of dummy conductive cells includes operations of forming a group of dummy conductive cells in a single empty area of the empty areas when the single empty area in one pair of the neighboring metal layers is overlapped by a signal line in the same pair of the neighboring metal layers. When viewed in plan view, projection areas of the group of dummy conductive cells are vertically overlapped by a projection area of the signal line. A semiconductor device is also disclosed herein.Type: ApplicationFiled: December 13, 2019Publication date: April 16, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yu MA, Hui-Mei CHOU, Kuo-Ji CHEN
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Patent number: 10510692Abstract: A semiconductor device includes metal layers, first dummy conductive cells, and groups of second dummy conductive cells. The metal layers include empty areas and are grouped into pairs of neighboring metal layers. The first dummy conductive cells are each formed in each of the empty areas in each of the pairs of neighboring metal layers that is overlapped by another empty area or a line in the same pair of neighboring metal layers. Each group of the second dummy conductive cells is formed in each of the empty areas in each of the pairs of neighboring metal layers that is overlapped by a signal line in the same pair of neighboring metal layer.Type: GrantFiled: July 26, 2018Date of Patent: December 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yu Ma, Hui-Mei Chou, Kuo-Ji Chen
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Publication number: 20180337145Abstract: A semiconductor device includes metal layers, first dummy conductive cells, and groups of second dummy conductive cells. The metal layers include empty areas and are grouped into pairs of neighboring metal layers. The first dummy conductive cells are each formed in each of the empty areas in each of the pairs of neighboring metal layers that is overlapped by another empty area or a line in the same pair of neighboring metal layers. Each group of the second dummy conductive cells is formed in each of the empty areas in each of the pairs of neighboring metal layers that is overlapped by a signal line in the same pair of neighboring metal layer.Type: ApplicationFiled: July 26, 2018Publication date: November 22, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yu Ma, Hui-Mei Chou, Kuo-Ji Chen
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Patent number: 10043767Abstract: A method is disclosed that includes the operations outlined below. A plurality of dummy conductive cells that provide different densities are formed in a plurality of empty areas in a plurality of metal layers of a semiconductor device according to overlap conditions of the empty areas between each pair of neighboring metal layers.Type: GrantFiled: October 24, 2013Date of Patent: August 7, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Wei-Yu Ma, Hui-Mei Chou, Kuo-Ji Chen
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Patent number: 9892911Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.Type: GrantFiled: February 9, 2017Date of Patent: February 13, 2018Assignee: Lextar Electronics CorporationInventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
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Patent number: 9673353Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.Type: GrantFiled: April 23, 2015Date of Patent: June 6, 2017Assignee: Lextar Electronics CorporationInventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
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Publication number: 20170154769Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.Type: ApplicationFiled: February 9, 2017Publication date: June 1, 2017Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
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Publication number: 20170148951Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.Type: ApplicationFiled: February 8, 2017Publication date: May 25, 2017Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
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Patent number: 9601661Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.Type: GrantFiled: April 23, 2015Date of Patent: March 21, 2017Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
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Patent number: 9572847Abstract: The invention discloses an herbal extract of treating lung tumor. The herbal extract comprises Antrodia cinnamomea and Cordyceps militaris, and the herbal extract is manufactured as following: mingling Antrodia cinnamomea and Cordyceps militaris with a weight ratio being between 1:5 and 5:1 to obtain a mixture; blending the mixture with a solvent with a weight-volume percentage being 50%, followed by extracting at 40-90° C. to obtain a herbal solution; and concentrating the herbal solution to obtain the herbal extract.Type: GrantFiled: December 23, 2013Date of Patent: February 21, 2017Assignee: Kingland Property Corporation, Ltd.Inventors: Wei-Cheng Chen, Mei-Chou Lai, Shorong-Shii Liou, I-Min Liu
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Patent number: 9272010Abstract: The invention discloses an herbal extract of treating liver cancer, wherein a method of producing the herbal extract comprising the steps of: blending Antrodia cinnamomea, Rhinacanthus nasutus and Phellinus linteus and obtaining a mixture, wherein the weight percentages of Antrodia cinnamomea, Rhinacanthus nasutus and Phellinus linteus are 33.4 to 60%, 20 to 33.4% and 20 to 33.4% by weight of the mixture, respectively; soaking the mixture with a 95% ethanol solution with a weight-volume percentage being 50%, followed by extracting at 50 to 80° C.; and concentrating the extracted product to obtain the herbal extract. The invention also discloses a method of treating liver cancer.Type: GrantFiled: October 31, 2014Date of Patent: March 1, 2016Assignee: KINGLAND REAL ESTATE CO., LTD.Inventors: Wei-Cheng Chen, Mei-Chou Lai, Shorong-Shii Liou, I-Min Liu
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Publication number: 20150366921Abstract: The invention discloses an herbal extract of treating liver cancer, wherein a method of producing the herbal extract comprising the steps of: blending Antrodia cinnamomea, Rhinacanthus nasutus and Phellinus linteus and obtaining a mixture, wherein the weight percentages of Antrodia cinnamomea, Rhinacanthus nasutus and Phellinus linteus are 33.4 to 60%, 20 to 33.4% and 20 to 33.4% by weight of the mixture, respectively; soaking the mixture with a 95% ethanol solution with a weight-volume percentage being 50%, followed by extracting at 50 to 80° C.; and concentrating the extracted product to obtain the herbal extract. The invention also discloses a method of treating liver cancer.Type: ApplicationFiled: October 31, 2014Publication date: December 24, 2015Inventors: Wei-Cheng CHEN, Mei-Chou LAI, Shorong-Shii LIOU, I-Min LIU
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Patent number: 9153736Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.Type: GrantFiled: June 6, 2014Date of Patent: October 6, 2015Assignee: Lextar Electronics CorporationInventors: Hsiu-Mei Chou, Jui-Yi Chu, Cheng-Ta Kuo
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Publication number: 20150228853Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.Type: ApplicationFiled: April 23, 2015Publication date: August 13, 2015Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
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Publication number: 20150228854Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.Type: ApplicationFiled: April 23, 2015Publication date: August 13, 2015Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE