Patents by Inventor Mei-Chun Chen
Mei-Chun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240067746Abstract: Disclosed herein are humanized antibodies, antigen-binding fragments thereof, and antibody conjugates, that are capable of specifically binding to certain biantennary Lewis antigens, which antigens are expressed in a variety of cancers. The presently disclosed antibodies are useful to target antigen-expressing cells for treatment or detection of disease, including various cancers. Also provided are polynucleotides, vectors, and host cells for producing the disclosed antibodies and antigen-binding fragments thereof. Pharmaceutical compositions, methods of treatment and detection, and uses of the antibodies, antigen-binding fragments, antibody conjugates, and compositions are also provided.Type: ApplicationFiled: February 28, 2023Publication date: February 29, 2024Inventors: Tong-Hsuan CHANG, Mei-Chun YANG, Liahng-Yirn LIU, Jerry TING, Shu-Yen CHANG, Yen-Ying CHEN, Yu-Yu LIN, Shu-Lun TANG
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Patent number: 9991123Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a first doped region and a second doped region and a gate stack on the semiconductor substrate. The semiconductor device also includes a main spacer layer on a sidewall of the gate stack and a protection layer between the main spacer layer and the semiconductor substrate. The protection layer is doped with a quadrivalent element. The semiconductor device further includes an insulating layer formed over the semiconductor substrate and the gate stack and a contact formed in the insulating layer. The contact includes a first portion contacting the first doped region, and the contact includes a second portion contacting the second doped region. The first portion extends deeper into the semiconductor substrate than the second portion.Type: GrantFiled: May 2, 2017Date of Patent: June 5, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFATURING CO., LTD.Inventors: Mei-Chun Chen, Ching-Chen Hao, Wen-Hsin Chan, Chao-Jui Wang
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Publication number: 20170236716Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a first doped region and a second doped region and a gate stack on the semiconductor substrate. The semiconductor device also includes a main spacer layer on a sidewall of the gate stack and a protection layer between the main spacer layer and the semiconductor substrate. The protection layer is doped with a quadrivalent element. The semiconductor device further includes an insulating layer formed over the semiconductor substrate and the gate stack and a contact formed in the insulating layer. The contact includes a first portion contacting the first doped region, and the contact includes a second portion contacting the second doped region. The first portion extends deeper into the semiconductor substrate than the second portion.Type: ApplicationFiled: May 2, 2017Publication date: August 17, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mei-Chun CHEN, Ching-Chen HAO, Wen-Hsin CHAN, Chao-Jui WANG
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Patent number: 9647087Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with a gate stack formed on the semiconductor substrate. The method also includes forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack. The method further includes forming a main spacer layer on a sidewall of the gate stack to cover the protection layer and forming an insulating layer over the protection layer. In addition, the method includes forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate and forming one contact in the opening.Type: GrantFiled: September 2, 2015Date of Patent: May 9, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mei-Chun Chen, Ching-Chen Hao, Wen-Hsin Chan, Chao-Jui Wang
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Publication number: 20150380516Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with a gate stack formed on the semiconductor substrate. The method also includes forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack. The method further includes forming a main spacer layer on a sidewall of the gate stack to cover the protection layer and forming an insulating layer over the protection layer. In addition, the method includes forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate and forming one contact in the opening.Type: ApplicationFiled: September 2, 2015Publication date: December 31, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mei-Chun CHEN, Ching-Chen HAO, Wen-Hsin CHAN, Chao-Jui WANG
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Patent number: 9136340Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a first doped region and a second doped region, and a gate stack formed on the semiconductor substrate. The semiconductor device also includes a main spacer layer formed on a sidewall of the gate stack. The semiconductor device further includes a protection layer formed between the main spacer layer and the semiconductor substrate, and the protection layer is doped with a quadrivalent element. In addition, the semiconductor device includes an insulating layer formed on the semiconductor substrate and the gate stack, and a contact formed in the insulating layer. The contact has a first portion contacting the first doped region and has a second portion contacting the second doped region. The first region extends deeper into the semiconductor substrate than the second portion.Type: GrantFiled: June 5, 2013Date of Patent: September 15, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mei-Chun Chen, Ching-Chen Hao, Wen-Hsin Chan, Chao-Jui Wang
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Publication number: 20150129288Abstract: A circuit substrate includes: a substrate; an insulating coating layered structure formed on the substrate, having top and bottom surfaces, and formed with a patterned recess that is indented inwardly from the top surface, that is disposed above the bottom surface, and that is defined by a recess-defining wall, the recess-defining wall having a bottom wall portion and a surrounding wall portion that extends upwardly from a periphery of the bottom wall portion; and a patterned metallic layered structure including an electroless plating metal layer formed on the bottom wall portion of the recess-defining wall.Type: ApplicationFiled: November 13, 2013Publication date: May 14, 2015Applicant: TAIWAN GREEN POINT ENTERPRISES CO., LTD.Inventors: Pen-Yi LIAO, Tsung-Han WU, Fu-Pin TANG, Mei-Chun CHEN, Yu-Jen CHOU
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Publication number: 20140361364Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a first doped region and a second doped region, and a gate stack formed on the semiconductor substrate. The semiconductor device also includes a main spacer layer formed on a sidewall of the gate stack. The semiconductor device further includes a protection layer formed between the main spacer layer and the semiconductor substrate, and the protection layer is doped with a quadrivalent element. In addition, the semiconductor device includes an insulating layer formed on the semiconductor substrate and the gate stack, and a contact formed in the insulating layer. The contact has a first portion contacting the first doped region and has a second portion contacting the second doped region. The first region extends deeper into the semiconductor substrate than the second portion.Type: ApplicationFiled: June 5, 2013Publication date: December 11, 2014Inventors: Mei-Chun CHEN, Ching-Chen HAO, Wen-Hsin CHAN, Chao-Jui WANG
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Publication number: 20030110219Abstract: A method of storing data for a collaboration system. In the collaboration system, a first and second data are respectively used for implementation of a plurality of child processes and a parent process comprising the child processes. The method comprises the steps of storing the first and second data, storing a link in the first data, and linking the first and second data by the link.Type: ApplicationFiled: February 6, 2002Publication date: June 12, 2003Inventors: Chih-Hao Hsu, Mei-Chun Chen