Patents by Inventor Mei Fun Chen

Mei Fun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for sectioning a semiconductor wafer with FIB for viewing with SEM
    Patent number: 6252227
    Abstract: An improved method for sectioning a semiconductor wafer using a focused ion beam (FIB) apparatus permits a clearer image of the site of the cut to be formed from secondary electrons produced by the beam. The clearer image helps the operator of the FIB apparatus to make a more accurate cut. Before the FIB cut is made, a laser is used to cut into the wafer to expose the lowermost layer of silicon dioxide. This oxide and any oxide splatters from the laser cut are then removed with an oxide etcher. The FIB cut can then be made without splattering silicon dioxide over the area being viewed. A low beam current is used for the FIB cut.
    Type: Grant
    Filed: October 19, 1998
    Date of Patent: June 26, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Fouriers Tseng, Mei Fun Chen, At Chuan Chen, Huey Ling Chen