Patents by Inventor Mei Han

Mei Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230026811
    Abstract: A system and a method for removing haze from remote sensing images are disclosed. One or more hazy input images with at least four spectral channels and one or more target images with the at least four spectral channels are generated. The one or more hazy input images correspond to the one or more target images, respectively. A dehazing deep learning model is trained using the one or more hazy input images and the one or more target images. The dehazing deep learning model is provided for haze removal processing.
    Type: Application
    Filed: July 15, 2021
    Publication date: January 26, 2023
    Applicant: PING AN TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: HANG ZHOU, JUIHSIN LAI, MEI HAN
  • Publication number: 20230008177
    Abstract: A thin film transistor substrate comprises: a substrate; a scan line disposed on the substrate and extending along a first direction; a semiconductor layer disposed on the scan line; and a drain electrode disposed on the semiconductor layer and comprising an arc edge outside the scan line, wherein a part of the semiconductor layer extends along a second direction perpendicular to the first direction and the arc edge overlaps the part of the semiconductor layer.
    Type: Application
    Filed: September 14, 2022
    Publication date: January 12, 2023
    Inventors: Tsung-Han TSAI, Hsia-Ching CHU, Mei-Chun SHIH
  • Publication number: 20220408698
    Abstract: A system and a method for detecting animals in a region of interest are disclosed. An image that captures a scene in the region of interest is received. The image is fed to an animal detection model to produce a group of probability maps for a group of key points and a group of affinity field maps for a group of key point sets. One or more connection graphs are determined based on the group of probability maps and the group of affinity field maps. Each connection graph outlines a presence of an animal in the image. One or more animals present in the region of interest are detected based on the one or more connection graphs.
    Type: Application
    Filed: June 28, 2021
    Publication date: December 29, 2022
    Applicant: PING AN TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: CHEN DU, JUIHSIN LAI, MEI HAN
  • Publication number: 20220405883
    Abstract: A system and a method for super-resolution image processing in remote sensing are disclosed. One or more sets of multi-temporal images with an input resolution and one or more first target images with a first output resolution are generated from one or more data sources. The first output resolution is higher than the input resolution. Each set of multi-temporal images is processed to improve an image match in the corresponding set of multi-temporal images. The one or more sets of multi-temporal images are associated with the one or more first target images to generate a training dataset. A deep learning model is trained using the training dataset. The deep learning model is provided for subsequent super-resolution image processing.
    Type: Application
    Filed: June 21, 2021
    Publication date: December 22, 2022
    Applicant: PING AN TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: YUCHUAN GOU, JUIHSIN LAI, MEI HAN
  • Patent number: 11532503
    Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pin-Wen Chen, Chia-Han Lai, Mei-Hui Fu, Min-Hsiu Hung, Ya-Yi Cheng
  • Patent number: 11532507
    Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Han Chen, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chung-Ting Ko, Jr-Hung Li, Chi On Chui
  • Publication number: 20220391614
    Abstract: A system and a method for image-based crop identification are disclosed. The image-based crop identification system includes a database, a communication module and a model library. The database stores sample aerial data and annotated aerial data. The communication module is coupled to the database, and is configured to provide the sample aerial data to a user and receive the annotated aerial data from the user. The model library is coupled to the database, and is configured to obtain the annotated aerial data, train a crop classification model based on the annotated aerial data, and provide the trained crop classification model for subsequent crop identification. The annotated aerial data include determination of the type of the crop appearing in the sample aerial data.
    Type: Application
    Filed: June 2, 2021
    Publication date: December 8, 2022
    Applicant: PING AN TECHNOLOGY (SHENZHEN) CO., LTD.
    Inventors: Chen Du, Jui-Hsin Lai, Mei Han
  • Publication number: 20220388975
    Abstract: A sulfonamide benzamide derivative has the structure shown in Formula II that can be prepared as an anti-HBV (hepatitis B virus) pharmaceutical composition; it is prepared by sulfonation reaction, acylation reaction and sulfonylation reaction; the sulfonamide benzamide derivative has been shown effective activity for anti-HBV by inhibiting HBV DNA replication in vitro.
    Type: Application
    Filed: May 12, 2022
    Publication date: December 8, 2022
    Inventors: Haiyong Jia, Chuanju Li, Lei Zhang, Linyue Liu, Mei Wang, Xin Li, Xianghui Han
  • Publication number: 20220387508
    Abstract: The present disclosure provides a Wnt family member 4/tyrosine 3-monooxygenase/tryptophan 5-monooxygenase activation protein zeta (Wnt4/YWHAZ) co-modified mesenchymal stem cell (MSC)-derived exosome, and a preparation method and use thereof, belonging to the technical field of skin repair. In the present disclosure, the MSC-derived exosome is modified by overexpressing adenovirus vectors expressing a Wnt4 gene and a YWHAZ gene in the MSCs, such that the exosome overexpresses the Wnt4 gene and the YWHAZ gene, to achieve a medicinal purpose of promoting regeneration and repair of a scalded skin tissue in a rat with the MSC-derived exosome.
    Type: Application
    Filed: May 21, 2020
    Publication date: December 8, 2022
    Inventors: Bin Zhang, Bo Ban, Mei Zhang, Qingli Bie, Sen Wang, Haixin Dong, Jie Wen, Shushan Han, Zhi Chen
  • Publication number: 20220384276
    Abstract: In an embodiment, a device includes: a semiconductor substrate; a first fin extending from the semiconductor substrate; a second fin extending from the semiconductor substrate; an epitaxial source/drain region including: a main layer in the first fin and the second fin, the main layer including a first semiconductor material, the main layer having an upper faceted surface and a lower faceted surface, the upper faceted surface and the lower faceted surface each being raised from respective surfaces of the first fin and the second fin; and a semiconductor contact etch stop layer (CESL) contacting the upper faceted surface and the lower faceted surface of the main layer, the semiconductor CESL including a second semiconductor material, the second semiconductor material being different from the first semiconductor material.
    Type: Application
    Filed: July 28, 2022
    Publication date: December 1, 2022
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20220359688
    Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 10, 2022
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 11489053
    Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: November 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20220343100
    Abstract: A method for cutting or extracting video clips from a video, including the audio content relevant to points of particular interest, and combining the same for instruction or training on particular points; a computing device applying the method extracts text information from the spoken audio content of a video to be cut and obtains multiple paragraph segmentation positions as candidates for inclusion in a desired and finished presentation by analyzing the information from text representing the spoken audio content, the analysis being carried out by a semantic segmentation model. Candidate items of text are obtained by isolating pieces of text according to the paragraph segmentation positions. Time stamps of the candidate text segments are acquired, and candidate video clips are obtained by cutting the video according to the acquired time stamps.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 27, 2022
    Inventors: Xinyi Wu, Yiwei Wang, Tian Xia, Peng Chang, Mei Han, Jing Xiao
  • Patent number: 11474400
    Abstract: A display device is disclosed, which includes: a substrate; a scan line disposed on the substrate; a drain electrode, disposed on the substrate and including an arc edge; a first transparent conductive layer disposed on the substrate; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer, wherein the arc edge is located outside the scan line, and the arc edge is not overlapped with the second transparent conductive layer.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: October 18, 2022
    Assignee: REXON INDUSTRIAL CORP., LTD.
    Inventors: Tsung-Han Tsai, Hsia-Ching Chu, Mei-Chun Shih
  • Publication number: 20220328649
    Abstract: A semiconductor structure includes a fin protruding from a substrate, a first and a second metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each of the first and the second metal gate stacks. Furthermore, the dielectric feature includes a two-layer structure, where sidewalls of the first layer are defined by the second layer, and where the first and the second layers have different compositions.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 13, 2022
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 11450572
    Abstract: In an embodiment, a device includes: a semiconductor substrate; a first fin extending from the semiconductor substrate; a second fin extending from the semiconductor substrate; an epitaxial source/drain region including: a main layer in the first fin and the second fin, the main layer including a first semiconductor material, the main layer having a upper faceted surface and a lower faceted surface, the upper faceted surface and the lower faceted surface each being raised from respective surfaces of the first fin and the second fin; and a semiconductor contact etch stop layer (CESL) contacting the upper faceted surface and the lower faceted surface of the main layer, the semiconductor CESL including a second semiconductor material, the second semiconductor material being different from the first semiconductor material.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20220292237
    Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.
    Type: Application
    Filed: May 27, 2022
    Publication date: September 15, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Yuan TING, Hsin-Cheng Chen, Sandeep Kumar Goel, Mei Hsu Wong, Yun-Han Lee
  • Patent number: 11408395
    Abstract: A method and a device for detecting an active power of a wind turbine. The method includes: acquiring a current rotation speed of a rotor of a wind turbine and a current outputted active power; determining an effective wind speed of the wind turbine; determining a maximum active power capable to be captured by the wind turbine at the current rotation speed; determining a maximum active power capable to be outputted by the wind turbine, and determining a release power at which the wind turbine is capable to release a rotation kinetic energy of the wind turbine for a predetermined time at the current rotation speed; and determining the available active power of the wind turbine, based on the maximum active power capable to be outputted, the release power, and the current outputted active power.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: August 9, 2022
    Assignee: BEIJING GOLDWIND SCIENCE & CREATION WINDPOWER EQUIPMENT CO., LTD.
    Inventors: Mengting Yu, Guilin Zhou, Mei Han
  • Publication number: 20220238702
    Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Inventors: Jia-Heng Wang, Chun-Han Chen, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: D965106
    Type: Grant
    Filed: January 19, 2022
    Date of Patent: September 27, 2022
    Assignee: Linyi Qihong International Trade Co., Ltd.
    Inventor: Mei Han