Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.

Abstract: A solar lighting device includes a transparent housing. Within the housing, there are provided a light-emitting member (e.g., LED or lamp), a control circuit having a microprocessor and a switch activated by magnetic force, light, or body temperature, and a solar battery for supplying electric power to both the light-emitting member and the control circuit. A transparent or translucent object such as cup, bottle, or ornament may be mounted on the lighting device such that light with varying color and/or brightness may be emitted from the object as controlled by the microprocessor and the switch activated by an approaching trigger member when the lighting device is activated.

Abstract: A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has two opposite sides, and is made from a ferroelectric material having a formula of Pb1?xBaxZrO3, where x is a positive number greater than 0.3 and less than 0.6. The first and second electrodes are respectively formed on the sides of the ferroelectric film. The dielectric constant of the ferroelectric film varies with a voltage applied to the first and second electrodes.

Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.

Abstract: A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.

Abstract: An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends.

Abstract: A light-emitting device with improved optical efficiency is disclosed. A semiconductor substrate underlies active p-n junction layers, and has an internal scattering/reflecting surface near the bottom surface of the semiconductor substrate. Accordingly, the light originated at the active p-n junction layers is internally reflected from the internally curved reflecting surface, and substantially passes though the top surface of the semiconductor substrate.

Abstract: A method for forming a die protecting layer is disclosed. The method comprises the following steps: providing a wafer with numerous dies on a first surface and a second surface, forming a transparent protecting layer on the second surface of the wafer. Clearly, the transparent protecting layer is directly formed on the backside or the front side of the wafer.

Abstract: A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has two opposite sides, and is made from a ferroelectric material having a formula of Pb1-xBaxZrO3, where x is a positive number greater than 0.3 and less than 0.6. The first and second electrodes are respectively formed on the sides of the ferroelectric film. The dielectric constant of the ferroelectric film varies with a voltage applied to the first and second electrodes.

Abstract: An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends.

Abstract: An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.