Patents by Inventor Mei Po (Mabel) Yeung

Mei Po (Mabel) Yeung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
    Patent number: 7780814
    Abstract: A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency.
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: August 24, 2010
    Assignee: Applied Materials, Inc.
    Inventors: John A. Pipitone, Kenneth D. Smyth, Mei Po (Mabel) Yeung
  • Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
    Publication number: 20070006972
    Abstract: A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency.
    Type: Application
    Filed: July 8, 2005
    Publication date: January 11, 2007
    Inventors: John Piptone, Kenneth Smyth, Mei Po (Mabel) Yeung