Abstract: Within a method for forming a spacer layer from a second layer formed of a second material laminated upon a first layer formed of a first material, in turn formed over a topographic feature, there is employed a three step etch method. The three step etch method employs: (1) a first etch method having a first enhanced etch selectivity for the second material with respect to the first material; (2) a second etch method having a second substantially neutral etch selectivity for the second material with respect to the first material; and (3) a third etch method having a third enhanced etch selectivity for the first material with respect to the second material. In accord with the three step etch method, the spacer layer is fabricated with enhanced dimensional control.

Abstract: Within a method for forming a spacer layer from a second layer formed of a second material laminated upon a first layer formed of a first material, in turn formed over a topographic feature, there is employed a three step etch method. The three step etch method employs: (1) a first etch method having a first enhanced etch selectivity for the second material with respect to the first material; (2) a second etch method having a second substantially neutral etch selectivity for the second material with respect to the first material; and (3) a third etch method having a third enhanced etch selectivity for the first material with respect to the second material. In accord with the three step etch method, the spacer layer is fabricated with enhanced dimensional control.

Abstract: Within a method for forming a spacer layer, there is first provided a substrate having formed thereover a topographic feature in turn having formed thereover a second microelectronic layer formed of a second material having a second thickness in turn having formed thereover a first microelectronic layer formed of a first material having a first thickness. Within the method, the first material serves as an etch stop for second material and the first thickness is less than the second thickness. The first microelectronic layer and the second microelectronic layer are then successively etched to ultimately form a spacer layer with enhanced dimensional control.

Abstract: A method of forming a borderless contact, comprising the following steps. A substrate having an exposed conductive structure is provided. An oxynitride etch stop layer is formed over the substrate and the exposed conductive structure. An oxide dielectric layer is formed over the oxynitride etch stop layer. The oxide dielectric layer is etched with an etch process having a high selectivity of oxide-to-oxynitride to form a contact hole therein exposing a portion of the oxynitride etch stop layer over at least a portion of the exposed conductive structure. The etch process not appreciably etching the oxynitride etch stop layer and including: a fluorine containing gas; an inert gas; and a weak oxidant. The exposed portion of the oxynitride etch stop layer over at least a portion of the conductive structure is removed. A borderless contact is formed within the contact hole. The borderless contact being in electrical connection with at least a portion of the conductive structure.