Patents by Inventor Mei-Ting Hsu

Mei-Ting Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240332062
    Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.
    Type: Application
    Filed: June 12, 2024
    Publication date: October 3, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chung HUANG, Chiung-Wen HSU, Mei-Ju KUO, Yu-Ting WENG, Yu-Chi LIN, Ting-Chung WANG, Chao-Cheng CHEN
  • Publication number: 20240332160
    Abstract: An electronic device includes a substrate, a conductive structure disposed on the substrate, a conductive pad disposed on the conductive structure and electrically connected to the conductive structure through an opening of an insulating layer disposed on the conductive structure. In a top view, the conductive structure has a first long edge and a second long edge, and the conductive pad has a third long edge and a fourth long edge adjacent to the first long edge and the second long edge respectively. In a direction perpendicular to the first long edge, a distance between the first long edge and the second long edge is less than a distance between the third long edge and the fourth long edge, and a distance between the first long edge and the third long edge is different from a distance between the second long edge and the fourth long edge.
    Type: Application
    Filed: June 13, 2024
    Publication date: October 3, 2024
    Applicant: InnoLux Corporation
    Inventors: Mei-Chi Hsu, Yu-Chin Lin, Yu-Ting Liu
  • Patent number: 12046547
    Abstract: The present disclosure provides an electronic device including a substrate, a first pad, an insulating layer, a second pad, a conductive element and a chip. The first pad is disposed on the substrate. The insulating layer is disposed on the first pad and has a plurality of first openings. The second pad is electrically connected to the first pad through the first openings. The conductive particle is disposed on the second pad. The chip is electrically connected to the second pad through the conductive element. In a top view of the electronic device, the first openings are arranged along a long edge of the first pad, and an outline of at least one first opening has a curved shape.
    Type: Grant
    Filed: June 1, 2023
    Date of Patent: July 23, 2024
    Assignee: InnoLux Corporation
    Inventors: Mei-Chi Hsu, Yu-Chin Lin, Yu-Ting Liu
  • Patent number: 12040219
    Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chung Huang, Chiung-Wen Hsu, Mei-Ju Kuo, Yu-Ting Weng, Yu-Chi Lin, Ting-Chung Wang, Chao-Cheng Chen
  • Patent number: 10431400
    Abstract: The invention relates to a program switch for mounting on a printed circuit board comprising a housing, an insulator component with contact elements arranged thereon, and a switching element for contacting the contact elements. The housing has at least two connection elements for connecting the program switch to adjacent program switches to form a program switch arrangement having an arbitrary number of poles. Production and stock keeping and sale of the program switch are simple.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 1, 2019
    Assignee: Würth Elektronik eiSos GmbH & Co. KG
    Inventors: Mei-Ting Hsu, Alexander Gerfer
  • Publication number: 20180211797
    Abstract: The invention relates to a program switch for mounting on a printed circuit board comprising a housing, an insulator component with contact elements arranged thereon, and a switching element for contacting the contact elements. The housing has at least two connection elements for connecting the program switch to adjacent program switches to form a program switch arrangement having an arbitrary number of poles. Production and stock keeping and sale of the program switch are simple.
    Type: Application
    Filed: January 23, 2018
    Publication date: July 26, 2018
    Inventors: Mei-Ting HSU, Alexander GERFER
  • Patent number: 7093208
    Abstract: A Digital Design Method which may be automated is for obtaining timing closure in the design of large, complex, high-performance digital integrated circuits. The methodincludes the use of a tuner on random logic macros that adjusts transistor sizes in a continuous domain. To accommodate this tuning, logic gates are mapped to parameterized cells for the tuning and then back to fixed gates after the tuning. Tuning is constrained in such a way as to minimize “binning errors” when the design is mapped back to fixed cells. Further, the critical sections of the circuit are marked in order to make the optimization more effective and to fit within the problem-size constraints of the tuner. A specially formulated objective function is employed during the tuning to promote faster global timing convergence, despite possibly incorrect initial timing budgets. The specially formulated objective function targets all paths that are failing timing, with appropriate weighting, rather than just targeting the most critical path.
    Type: Grant
    Filed: May 10, 2004
    Date of Patent: August 15, 2006
    Assignee: International Business Machines Corporation
    Inventors: Patrick M. Williams, Ee K. Cho, David J. Hathaway, Mei-Ting Hsu, Lawrence K. Lange, Gregory A. Northrop, Chandramouli Visweswariah, Cindy ShuiKing Washburn, Jun Zhou
  • Publication number: 20040230924
    Abstract: A Digital Design Method which may be automated is for obtaining timing closure in the design of large, complex, high-performance digital integrated circuits. The methodincludes the use of a tuner on random logic macros that adjusts transistor sizes in a continuous domain. To accommodate this tuning, logic gates are mapped to parameterized cells for the tuning and then back to fixed gates after the tuning. Tuning is constrained in such a way as to minimize “binning errors” when the design is mapped back to fixed cells. Further, the critical sections of the circuit are marked in order to make the optimization more effective and to fit within the problem-size constraints of the tuner. A specially formulated objective function is employed during the tuning to promote faster global timing convergence, despite possibly incorrect initial timing budgets.
    Type: Application
    Filed: May 10, 2004
    Publication date: November 18, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Patrick M. Williams, Ee K. Cho, David J. Hathaway, Mei-Ting Hsu, Lawrence K. Lange, Gregory A. Northrop, Chandramouli Visweswariah, Cindy ShuiKing Washburn, Jun Zhou