Abstract: A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form, a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.

Abstract: A method of fabricating a charge trapping dielectric memory cell array comprises exposing a first photoresist to a first illumination pattern from a first mask to pattern bit line regions in a core region of the wafer and to pattern alignment mark regions. The alignment mark regions may be in a scribe lane region of the wafer. An impurity is implanted into the wafer within the bit line regions and the alignment mark regions and an oxide is grown on the surface of the wafer in the scribe lane region to produce oxide protrusions within the alignment mark regions. A second photoresist is exposed to a second illumination pattern from a second mask to pattern word line regions within the core region of the wafer and utilizing surface height variations of the oxide protrusions to detect alignment between the second mask and the first mask.

Abstract: An electric optical fiber grating has a central wavelength. The central wavelength of an optical fiber grating can be adjusted under strain. The filter includes a bimetal plate, an elastic structure and an solenoid to achieve the goal of switching the central wavelength of an optical fiber grating. Meanwhile, the bimetal plate can also provide proper passive compensation according to the temperature effect around them so that it is not necessary for the optical fiber grating that can switch central wavelengths, to monitor and conduct feedback control at all times. Thus it does not consume power. Therefore, the electric optical fiber grating filter can both achieve the goal of switching central wavelengths and has the advantage of not being sensitive to temperature.

Abstract: A process for fabricating a semiconductor device, the process includes providing a semiconductor substrate having an oxide-nitride-oxide layer thereon and a patterned resist layer overlying the oxide-nitride-oxide layer, wherein the oxide-nitride-oxide layer includes a first oxide layer, a nitride layer overlying the first oxide layer, and a second oxide layer overlying the nitride layer. The process further includes, performing an isotropic etch on the oxide-nitride-oxide layer to remove a portion of the oxide-nitride-oxide layer.

Abstract: A scheduling system and methodology for use in a network switch element having multiserver, multiple-arbiter architecture. Ingress ports and egress ports coupled to the cross-connect fabric of the network element are provided with multiple ingress and egress arbiters, respectively, for effectuating an iterative arbitration strategy such as RGA or RG. Arbiter architectures include singe-arbiter-per-port; single-arbiter-per-server; multiple-arbiters-per-port; and multiple-arbiters-per-server arrangements, wherein the arbiters can be implemented using RRA, BTA, Flexible Ring, or any other arbiter technology. Depending on the iteration strategy, ingress arbiter architecture and egress arbiter architecture, a variety of iterative, multiserver-capable scheduling algorithms can be obtained, which scheduling algorithms can also be implemented in QoS-aware network nodes.

Abstract: A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.

Abstract: One aspect of the present invention relates to a method of forming a SONOS type non-volatile semiconductor memory device, involving forming a first layer of a charge trapping dielectric on a semiconductor substrate; forming a second layer of the charge trapping dielectric over the first layer of the charge trapping dielectric on the semiconductor substrate; optionally at least partially forming a third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; forming a source/drain mask over the charge trapping dielectric; implanting a source/drain implant through the charge trapping dielectric into the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; and one of forming the third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate, reforming the third

Abstract: A method of making an optical waveguide fiber grating substrate comprising the steps of: providing a plurality of tungstenoxide particles and a plurality of zirconiumoxide particles; mixing and grinding the tungstenoxide particles and the zirconiumoxide particles; pressing the mixed and ground particles into a plane green body; and sintering the green body into a sintered body, the green body being loaded with a carrier plate and covered with a cover plate.

Abstract: The present invention pertains to a polarization independent tunable acousto-optical filter and the corresponding method. The filter diffracts an input light beam into a first input light beam unaffected by acoustic waves and a second input light beam affected by acoustic waves. A polarization beam displacer/combiner is employed to separate the input light beam into two orthogonal beams. Several polarized rotators are used to rotate the polarization of light by 90 degrees. An acousto-optical device makes the polarization of light with a particular wavelength rotate by 90 degrees. The two beams are then properly combined to form orthogonal beams. The filtering method has nothing to do with the polarization of the incident light. The filter has such advantages as a high extinction ratio, a small volume and a lower cost.

Abstract: A utensil assembly includes a body having two utensil portions respectively connected to two ends of the body. Two first engaging members are located on each of two sides of the body. Two receptacles are respectively and removably mounted to the two utensil portions and each receptacle has a second engaging member so as to engage with the first engaging members. Each receptacle has a tongue extending from a close end thereof and two third engaging member are located on two sides of each tongue. The two receptacles can be connected to be a shaft by engaging the third engaging members of one receptacle with the second engaging members of the other receptacle.

Abstract: The present invention pertains to a polarization independent tunable acousto-optical filter and the corresponding method. The filter diffracts an input light beam into a first input light beam unaffected by acoustic waves and a second input light beam affected by acoustic waves. A polarization beam displacer/combiner is employed to separate the input light beam into two orthogonal beams. Several polarized rotators are used to rotate the polarization of light by 90 degrees. An acousto-optical device makes the polarization of light with a particular wavelength rotate by 90 degrees. The two beams are then properly combined to form orthogonal beams. The filtering method has nothing to do with the polarization of the incident light. The filter has such advantages as a high extinction ratio, a small volume and a lower cost.

Abstract: There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions.

Abstract: The invention provides a structure of tunable optical filter grating. The structure includes a bimetallic strip and a compression spring to set up suitable strain for adjusting the position of the central wavelength. The bimetallic strip can also be specially designed to compensate for any drift in central wavelength due to temperature change so that temperature monitoring and feedback control designs is obsolete. Therefore, the operating wavelength of the optical grating is adjustable yet insensitive to temperature changes.

Abstract: An electric optical fiber grating has a central wavelength. The central wavelength of an optical fiber grating can be adjusted under strain. The filter includes a bimetal plate, an elastic structure and an solenoid to achieve the goal of switching the central wavelength of an optical fiber grating. Meanwhile, the bimetal plate can also provide proper passive compensation according to the temperature effect around them so that it is not necessary for the optical fiber grating that can switch central wavelengths, to monitor and conduct feedback control at all times. Thus it does not consume power. Therefore, the electric optical fiber grating filter can both achieve the goal of switching central wavelengths and has the advantage of not being sensitive to temperature.

Abstract: The invention describes a structure for an optical fiber grating package. The structure has a fiber grating that is mounted on a multi-layer metal plate. The fiber grating is formed on a fiber in the desired portion. Two ends of the fiber grating are secured to the two ends of the multi-layer metal plate. The multi-layer metal plate includes, for example, a bimetal plate and a thinner metal plate on the bimetal plate. The thinner metal plate is used to reduce the thermal expansion effect on the fiber grating. The structure further includes an adjusting plate located on the multi-layer metal plate on the side where the fiber grating is mounted so that the adjusting plate, serving as a pad, can lift the fiber of the fiber grating. The adjusting plate is also located a position between the grating portion of the fiber grating and one secured end of the fiber grating.

Abstract: A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed comprising steps of preparing a Si substrate, applying a layer including therein a Ti and an appropriate X element such as Co or Pt on the Si substrate, applying a W layer on the layer including therein the Ti and the X element for forming a W/X-Ti/Si structure, and transforming the W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain the device having a TiW barrier layer and a silicide layer contacted shallow junction. The present invention provides a simplified process for fabricating such a device having therewith a junction of a low resistance and a high temperature stability.