Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: An eye shadow case has a base seat, a plurality of inner casings, a shaft, and a cover. The cover receives the base seat, the inner casings, and the shaft. The base seat has a socket receiving the shaft. The shaft has a plurality of spaced disks, a plurality of spaced rods, and a top block. Each disk has a corrugation periphery. Each inner casing has an inner interior, a first C-shaped collar enclosing the respective disk, and a second C-shaped collar enclosing the respective rod. Each first C-shaped collar has an inner corrugation periphery and a first notch. Each second C-shaped collar has a second notch.