Patents by Inventor Mei Zhang

Mei Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6613199
    Abstract: A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.
    Type: Grant
    Filed: October 25, 2001
    Date of Patent: September 2, 2003
    Assignee: Novellus Systems, Inc.
    Inventors: Jeffrey A. Tobin, Jean Qing Lu, Thomas Mountsier, Hong Mei Zhang
  • Patent number: 6558645
    Abstract: A method for manufacturing carbon nanocoils which are grown by winding carbon atoms in a helical configuration and which have an external diameter of 1000 nm or less, the method comprising the steps of: placing an indium-tin-iron type catalyst inside a reactor, heating an area around the catalyst to a temperature equal to or greater than temperature at which hydrocarbon used as a raw material is broken down by an action of the catalyst, causing hydrocarbon gas to flow through the reactor so that the gas contacts the catalyst, and allowing carbon nanocoils to grow on a surface of the catalyst while the hydrocarbon is broken down in the vicinity of the catalyst. The indium-tin-iron type catalyst may be obtained by: a mixed catalyst of indium oxide and tin oxide, and a thin film of iron which is formed on a surface of this mixed catalyst.
    Type: Grant
    Filed: July 10, 2001
    Date of Patent: May 6, 2003
    Assignees: Daiken Chemical Co., Ltd.
    Inventors: Yoshikazu Nakayama, Mei Zhang, Akio Harada
  • Publication number: 20030046255
    Abstract: A system (50) for earning functional usage patterns of a user of the system (50) and for planning a best sequences of events suitable for a particular user in a particular context is disclosed. Information relating to user decisions, such as the context during which the decision was made and the actual user decision, is gathered by the DTV-agent (36) and delivered to the active avatar agent (37). The learning module (39) operates to identify all generalisation patterns from a number of instances. Method (500) then determines which particular decision is most appropriate by comparing the generalisation patterns with the current context for which a decision must be made. Clusters of such behaviour patterns are formed with each cluster having the same number of matched attributes. A decision selecting process then selects a decision which is most appropriate to the current context from the behaviour patterns.
    Type: Application
    Filed: April 24, 2002
    Publication date: March 6, 2003
    Inventors: Mikhail Prokopenko, Dong Mei Zhang, Ryszard Kowalczyk, Thomas Phillip Alexander Howard, Farhad Fuad Islam, Michael Alexander Oldfield
  • Publication number: 20030012721
    Abstract: A method for manufacturing carbon nanocoils which are grown by winding carbon atoms in a helical configuration and which have an external diameter of 1000 nm or less, the method comprising the steps of: placing an indium-tin-iron type catalyst inside a reactor, heating an area around the catalyst to a temperature equal to or greater than temperature at which hydrocarbon used as a raw material is broken down by an action of the catalyst, causing hydrocarbon gas to flow through the reactor so that the gas contacts the catalyst, and allowing carbon nanocoils to grow on a surface of the catalyst while the hydrocarbon is broken down in the vicinity of the catalyst. The indium-tin-iron type catalyst may be obtained by: a mixed catalyst of indium oxide and tin oxide, and a thin film of iron which is formed on a surface of this mixed catalyst.
    Type: Application
    Filed: July 10, 2001
    Publication date: January 16, 2003
    Applicant: YOSHIKAZU NAKAYAMA and DAIKEN CHEMICAL CO., LTD.
    Inventors: Yoshikazu Nakayama, Mei Zhang, Akio Harada
  • Patent number: 6500762
    Abstract: We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. We have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at the bottom of a high aspect ratio contact via and on the walls of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. An increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, including but not limited to applicants' preferred technique, an inductively coupled RF ion metal plasma.
    Type: Grant
    Filed: January 24, 2002
    Date of Patent: December 31, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Imran Hashim, Hong-Mei Zhang, John C. Forster
  • Publication number: 20020068449
    Abstract: We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that despite previously-held views, it is possible to increase the copper seed layer coverage simultaneously at the bottom of the via and on the wall of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.
    Type: Application
    Filed: January 24, 2002
    Publication date: June 6, 2002
    Inventors: Imran Hashim, Hong-Mei Zhang, John C. Forster
  • Patent number: 6391776
    Abstract: A method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at both the bottom of the via and on the wall of the via . This increase is achieved by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: May 21, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Imran Hashim, Hong-Mei Zhang, John C. Forster