Abstract: A user equipment (UE) and a method performed by the UE are provided. The method includes transitioning from a radio resource control (RRC) inactive (RRC_INACTIVE) state to an RRC idle (RRC_IDLE) state upon determining that the UE has failed to find a suitable cell and camped on an acceptable cell; and discarding a radio access network (RAN) notification area (RNA) configuration that comprises at least one of a list of tracking area identities (IDs) or a list of RAN area IDs in response to the transitioning from the RRC_INACTIVE state to the RRC_IDLE state. The acceptable cell fulfills a minimum set of requirements to initiate an emergency call and to receive one or more Earthquake & Tsunami Warning System (ETWS) and Commercial Mobile Alert System (CMAS) notifications. The suitable cell provides normal services. The acceptable cell provides limited services.

Abstract: A method for LBT failure detection performed by a UE is provided. The method includes: receiving, by a MAC entity of the UE, an LBT failure indication from a lower layer for all UL transmissions; increasing an LBT failure counter when the MAC entity receives the LBT failure indication; determining an LBT failure event occurs when the LBT failure counter is greater than or equal to a threshold; and resetting the LBT failure counter after the MAC entity has not received the LBT failure indication for a time period.

Abstract: A method for a user equipment (UE) for cell selection while the UE is in a radio resource control (RRC) Inactive state is provided. The method receives, via control signaling, a configuration indicating a target frequency carrier and a corresponding target core network (CN) type. The method then causes the UE to transition from an RRC Connected state to the RRC Inactive state based on the received configuration. While the UE is in the RRC Inactive state, the method selects a suitable cell among a plurality of suitable cells that are associated with the target frequency carrier. The method selects the suitable cell irrespective of the received target CN type.

Abstract: A method performed by a BS for CHO is provided. The method includes transmitting a CHO command to a UE, the CHO command including a CHO command ID and a measurement ID associated with the CHO command ID; causing the UE to execute the CHO command to handover to a target BS when a trigger condition associated with the measurement ID is fulfilled; causing the UE to forgo transmitting the measurement report during the execution of the CHO command despite the UE being configured, via a report configuration associated with the measurement ID, to transmit the measurement report; transmitting, to the UE, a message that causes the UE to remove the CHO command; and after transmitting the message to the UE, determining that the report configuration is removed by the UE without transmitting, to the UE, an instruction to remove the report configuration.

Abstract: The present invention provides an overlay target. The overlay target includes a plurality of first pattern blocks and a plurality of second pattern blocks. The first pattern blocks and the second patterns blocks are arranged in array by being separated by at least one first gaps stretching along a first direction and at least one second gaps stretching along a second direction. Each first pattern block is composed of a plurality of first stripe patterns stretching along a third direction, and each second pattern block is composed of a plurality of second stripe patterns stretching along a fourth direction. The first direction is orthogonal to the second direction, the third direction and the fourth direction are 45 degrees relative to the first direction.

Abstract: A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract: A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.