Abstract: A method of producing an etching mask. A substrate is provided, a metal layer is applied, the metal layer comprises or is formed from at least one transition metal and/or aluminum. A masking layer is applied and the masking layer is structured. The metal layer is exposed in at least one processing region. The substrate is coated with a tetrel layer including at least partially a tetrel, wherein an interdiffusion zone between the transition metal or aluminum and the tetrel is formed in the processing region at an interface between the metal layer and the tetrel layer. The masking layer is removed and the metal layer s selectively etched. The substrate is exposed in at least one etching region other than the processing region, and the metal layer is at least partially maintained in the processing region.

Abstract: A method of producing a semiconductor component having at least one exposed membrane section. A semiconductor material is provided having a carrier substrate provided with a passivation layer, where there is a membrane ply which is disposed atop the passivation layer and includes a material which is variable by water, in particular hydrolyzable, where the membrane ply is covered by a protective layer on an opposite side from the passivation layer. A portion of the carrier substrate is removed using a wet-chemical method in order to obtain an exposed region of the passivation layer in a structured region of the semiconductor material. A section of the membrane ply is exposed in the structured region by means of a first dry etching step for etching of the passivation layer and a second dry etching step for etching of the protective layer, in order to obtain the exposed membrane section.

Abstract: A method of producing an etching mask. A substrate is provided, a metal layer is applied, the metal layer comprises or is formed from at least one transition metal and/or aluminum. A masking layer is applied and the masking layer is structured. The metal layer is exposed in at least one processing region. The substrate is coated with a tetrel layer including at least partially a tetrel, wherein an interdiffusion zone between the transition metal or aluminum and the tetrel is formed in the processing region at an interface between the metal layer and the tetrel layer. The masking layer is removed and the metal layer s selectively etched. The substrate is exposed in at least one etching region other than the processing region, and the metal layer is at least partially maintained in the processing region.

Abstract: Method and device for severing a microchip from a wafer and arranging the microchip on a substrate, wherein the microchip is contact-bonded to the free end of a tip during severing and accordingly adheres to the tip through adhesive force while the substrate is transported. A coordinate measuring machine can advantageously be used as device.

Abstract: Method and device for severing a microchip from a wafer and arranging the microchip on a substrate, wherein the microchip is contact-bonded to the free end of a tip during severing and accordingly adheres to the tip through adhesive force while the substrate is transported. A coordinate measuring machine can advantageously be used as device.

Abstract: A method of forming a radiation filter for a lithographic system, the method including forming at least one structure in or on a filter body, wherein the at least one structure provides a filtering effect and least one of a), b), c) or d): a) the at least one structure includes a plurality of transmissive, reflective, absorbing or fluorescent structures, and the method includes providing a desired distribution of the structures to provide a desired filtering effect; b) forming the at least one structure includes forming at least one transmissive, absorbing, reflective or fluorescent layer that has a variable thickness; c) forming the at least one structure includes altering at least one optical property to provide a variation of the optical property with position; d) the at least one structure includes a fluorescent layer that provides variation of at least one fluorescence property with position and/or angle of incidence.

Abstract: A device and method for measuring a power density distribution of a radiation source is provided. The device includes a radiation source designed to emit a light beam in a radiation direction; a substrate disposed downstream of the radiation source in the radiation direction and having an extent in an x-direction and a y-direction, the substrate having a first region and at least one further second region, and the first region comprises a diffractive structure designed to separate the light beam impinging on the substrate into a zeroth order of diffraction and at least one first order of diffraction; and a detector unit disposed downstream of the substrate in the radiation direction and designed to measure the intensity of the first order of diffraction transmitted through the substrate and to derive a power density distribution therefrom.

Abstract: A device and method for measuring a power density distribution of a radiation source is provided. The device includes a radiation source designed to emit a light beam in a radiation direction; a substrate disposed downstream of the radiation source in the radiation direction and having an extent in an x-direction and a y-direction, the substrate having a first region and at least one further second region, and the first region comprises a diffractive structure designed to separate the light beam impinging on the substrate into a zeroth order of diffraction and at least one first order of diffraction; and a detector unit disposed downstream of the substrate in the radiation direction and designed to measure the intensity of the first order of diffraction transmitted through the substrate and to derive a power density distribution therefrom.