Patents by Inventor Meiki GOTO

Meiki GOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor light-emitting element
    Patent number: 10186671
    Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: January 22, 2019
    Assignees: STANLEY ELECTRIC CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Meiki Goto, Masakazu Sugiyama, Mathew Manish
  • SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20170324048
    Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.
    Type: Application
    Filed: October 22, 2015
    Publication date: November 9, 2017
    Applicants: STANLEY ELECTRIC CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Meiki GOTO, Masakazu SUGIYAMA, Mathew MANISH