Abstract: A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the p

Abstract: A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the p

Abstract: This invention discloses a multi-wavelength selective laser rapid prototyping system comprising laser light sources, laser transmission and control components, laser focusing and scanning components, manufacturing chamber, powder feeding components, powder laying components, gas circulation control components, real-time monitoring components, lifting components, powder recovery components, and computer. Said laser light source comprises a first laser source for providing a first wavelength laser beam and a second laser source for providing a second wavelength laser beam, or a laser source for providing both the first and second wavelength laser beams. Adoption of a short wave laser beam in the system is beneficial to improve the manufacturing resolution and precision. At the same time a superposed long wavelength laser beam is adopted to ensure the preheating and subsequent heat treatment. Thermal stress of the manufactured structure is reduced. Manufacturing efficiency is further improved.