Abstract: A plurality of particle size reference values are specified. Data are obtained based at least in part on the specified plurality of particle size reference values.

Abstract: Embodiments of apparatuses, articles, methods, and systems for measuring sensor drift characteristics are generally described herein. In some embodiments, a system having a sensor platform to receive a sensor and measure drift characteristic of the sensor is disclosed. The system may further include a data acquisition device coupled to the sensor platform to receive the measured drift characteristic and to compare them to acceptance criteria in order to determine an acceptability of the sensor. Other embodiments may be described and claimed.

Abstract: A plurality of particle size reference values are specified. Particle size data is obtained based at least in part on the specified plurality of particle size reference values.

Abstract: A method and apparatus provides for particle size detection. A particle detector signal is utilized to provide particle size information. The particle detection signal is obtained by utilizing particle detector information.

Abstract: A plurality of particle size reference values are specified. Particle size data is obtained based at least in part on the specified plurality of particle size reference values.

Abstract: A method and apparatus provides for particle size detection. A particle detector signal is utilized to provide particle size information. The particle detection signal is obtained by utilizing particle detector information.

Abstract: A needle is pressed into the backside oxide of a semiconductor wafer and a voltage applied to the wafer greater than the breakdown voltage of the oxide in order to make an electrical contact with the bulk material of the wafer. A capacitor plate is provided proximate to a wafer on a chuck and a Kelvin probe is provided proximate to the wafer. A varying voltage is applied between the chuck and the capacitor plate and a voltage is monitored between the Kelvin probe and the chuck. The monitored voltage remaining constant indicates electrical contact between the chuck and the wafer.

Abstract: An apparatus for making and verifying electrical contact with the backside of a semiconductor wafer having a bulk portion covered with an insulating layer of oxide includes a contact probe, a wafer chuck having at least one probe vacuum groove and a probe aperture and a probe cylinder having a low pressure and a high pressure portion. The low pressure portion communicates with the probe vacuum groove and the probe aperture. The apparatus further includes a piston movably located between the low pressure and high pressure portions. The contact probe is attached to the piston and adapted to be protrudable from the probe aperture. The groove, aperture and low pressure portion are adapted to form a low pressure chamber with the wafer. The probe is urgeable to pierce the oxide and make electrical contact with the bulk portion of the wafer.

Abstract: In an X-ray analysis apparatus, a pulse amplitude shift correction circuit is provided for producing correction signals which are a measure of pulse amplitude shifts and which are in response to the pulse amplitude shifts. This circuit provides automatic correction of pulse amplitude shifts so that the pulse amplifier of the device is controlled.