Patents by Inventor Meiseki Katayama

Meiseki Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the disintegration of silicon for semiconductor
    Patent number: 4565913
    Abstract: A method for the disintegration of silicon for preparation of semiconductor materials. Polycrystalline silicon in a rod form is subjected to microwave radiation in an oven for a short period of time, whereby the rod-like polycrystalline silicon is dielectrically heated quickly from its inside thereby causing it to be disintegrated.
    Type: Grant
    Filed: July 12, 1984
    Date of Patent: January 21, 1986
    Assignee: Komatsu Electronic Metals Co., Ltd.
    Inventors: Yoshifumi Yatsurugi, Meiseki Katayama