Abstract: Provided are an aluminum scandium alloy target and a method of manufacturing the same. The method comprises: preparing metal aluminum and metal scandium with purities of 99.99% or more respectively; mixing the metal aluminum into the metal scandium and smelting through a plurality of cycles to obtain a desired aluminum scandium alloy, in which the metal scandium account for 5-40 wt % and the metal aluminum account for 60-95 wt %; injecting the aluminum scandium alloy into a mold to obtain an aluminum scandium alloy target billet; and mechanically processing the billet to obtain the aluminum scandium alloy target. The method addresses the problems of the prior art in which uniform distributions of ingredients in the target are difficult to achieve, scandium is not uniformly distributed, and the target has a high oxide content, a low compactness, a low alloy purity and are unsuitable for manufacturing a sputter coating.

Abstract: Disclosed are an aluminum-scandium alloy target with high scandium content and a preparation method thereof. The method comprises: preparing aluminum and scandium; melting the scandium; mixing the aluminum into the scandium, smelting and cooling to obtain an aluminum-scandium alloy through a plurality of cycles; ball-milling the alloy to obtain alloy powder and drying in vacuum, then pre-pressing and sintering in vacuum to obtain an aluminum-scandium alloy target billet; performing a thermal deformation process on the target billet to obtain the target, comprising hot forging, hot rolling and finish machining. In the present disclosure, the target has more uniform structure and chemical composition, higher relative density (up to 99.0% or more), finer grain size and higher ductility; reduce defects of shrinkage cavity and porosity, save material cost, solve problem of alloys with high brittleness, unable to process targets, meeting the requirements on wiring materials for large-scale integrated circuits.