Abstract: The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance.

Abstract: A method of manufacturing a diamond UV sensor element improved with a UV/visible light blind ratio using a diamond single crystal as a light receiving portion and detecting a light based on the change of electric resistance caused by a light irradiated to the light receiving portion is provided, the method, including (1) a step of hydrogenating the surface of the diamond single crystal in an atmosphere substantially containing hydrogen, and (2) a step of forming a light receiving portion by exposing the hydrogenated surface of the diamond single crystal into an atmosphere containing ozone or active oxygen.

Abstract: The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance.

Abstract: A method of manufacturing a diamond UV sensor element improved with a UV/visible light blind ratio using a diamond single crystal as a light receiving portion and detecting a light based on the change of electric resistance caused by a light irradiated to the light receiving portion is provided, the method, including (1) a step of hydrogenating the surface of the diamond single crystal in an atmosphere substantially containing hydrogen, and (2) a step of forming a light receiving portion by exposing the hydrogenated surface of the diamond single crystal into an atmosphere containing ozone or active oxygen.

Abstract: Au base electrode materials have fatal disadvantages, such as inferior adhesion to diamond, low mechanical strength, and low thermal stability. A diamond UV sensor is provided which includes a photoconductive or Schottky optical sensor element having two-terminal electrodes and detects light irradiating a light-receiving portion according to the changes in electrical resistance or photo-induced current of the material of the light-receiving portion. The sensor element includes diamond having a surface from which a conductive surface layer has been removed, and the surface of the diamond is used as the light-receiving portion and a junction interface with the electrodes. The electrodes include a rectifying and an ohmic electrode. The rectifying electrode is transparent electrode capable of transmitting light and is defined by a single layer made of a nitride of a refractory metal element.

Abstract: In a conventional ultraviolet sensing device using a diamond semiconductor in a light-receiving unit, an Au-based electrode material is used for both a rectifier electrode and an ohmic electrode. However, the Au-based electrode material has fatal defects, such as poor adhesion to diamond, low mechanical strength, and furthermore poor thermal stability. While avoiding complication of the device structure and exploiting the characteristics of a photoconductive sensing device, by using a carbide compound (TiC, ZrC, HfC, VC, NbC, TaC, CrC, MoC, and WC) of a high melting metal having a high mechanical strength for a rectifier electrode and/or a ohmic electrode, there is provided an extremely heat-stable diamond ultraviolet sensor having a light-receiving sensitivity to ultraviolet light having a wavelength of 260 nm or less.

Abstract: Au base electrode materials have fatal disadvantages, such as inferior adhesion to diamond, low mechanical strength, and low thermal stability. A diamond UV sensor is provided which includes a photoconductive or Schottky optical sensor element having two-terminal electrodes and detects light irradiating a light-receiving portion according to the changes in electrical resistance or photo-induced current of the material of the light-receiving portion. The sensor element includes diamond having a surface from which a conductive surface layer has been removed, and the surface of the diamond is used as the light-receiving portion and a junction interface with the electrodes. The electrodes include a rectifying and an ohmic electrode. The rectifying electrode is transparent electrode capable of transmitting light and is defined by a single layer made of a nitride of a refractory metal element.

Abstract: In a conventional ultraviolet sensing device using a diamond semiconductor in a light-receiving unit, an Au-based electrode material is used for both a rectifier electrode and an ohmic electrode. However, the Au-based electrode material has fatal defects, such as poor adhesion to diamond, low mechanical strength, and furthermore poor thermal stability. While avoiding complication of the device structure and exploiting the characteristics of a photoconductive sensing device, by using a carbide compound (TiC, ZrC, HfC, VC, NbC, TaC, CrC, MoC, and WC) of a high melting metal having a high mechanical strength for a rectifier electrode and/or a ohmic electrode, there is provided an extremely heat-stable diamond ultraviolet sensor having a light-receiving sensitivity to ultraviolet light having a wavelength of 260 nm or less.