Patents by Inventor Meiyu Piao
Meiyu Piao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10991622Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.Type: GrantFiled: August 6, 2019Date of Patent: April 27, 2021Assignee: DISCO CORPORTIONInventors: Meiyu Piao, Kentaro Odanaka, Masatoshi Wakahara, Wakana Onoe, Heidi Lan
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Patent number: 10784166Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.Type: GrantFiled: August 6, 2019Date of Patent: September 22, 2020Assignee: DISCO CORPORATIONInventors: Meiyu Piao, Kentaro Odanaka, Masatoshi Wakahara, Wakana Onoe, Heidi Lan
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Patent number: 10777460Abstract: A processing method of a workpiece for processing the workpiece including a substrate and a film made on a back surface of the substrate is provided. The processing method includes a sheet sticking step of sticking a sheet to the film, a protective film forming step of forming a protective film that covers the front surface side of the substrate, a mask pattern forming step of removing a part corresponding to planned dividing lines in the protective film and forming a mask pattern on the front surface side, an etching step of carrying out dry etching for the substrate from the front surface side and forming etching grooves and a film dividing step of dividing the film along the etching grooves by pressing the workpiece by an edge of a tip part of a pressing member having the tip part in which the edge has a curved shape.Type: GrantFiled: April 24, 2019Date of Patent: September 15, 2020Assignee: DISCO CORPORATIONInventors: Yukiko Matsumoto, Meiyu Piao
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Patent number: 10691090Abstract: A method of processing a device wafer includes the steps of applying a water-soluble protective film agent to a face side of the device wafer to form protective films thereon for protecting devices and leaving projected dicing lines exposed, dry-etching the device wafer through the protective films with a dry etching apparatus, recording a time when the water-soluble protective film agent is applied to the device wafer, confirming that the device wafer with the protective films formed thereon has been introduced into the dry etching apparatus, and issuing a warning if the introduction of the device wafer into the dry etching apparatus is not confirmed upon elapse of a predetermined time from the recorded time.Type: GrantFiled: September 7, 2018Date of Patent: June 23, 2020Assignee: DISCO CORPORATIONInventors: Meiyu Piao, Masahisa Tokuyama
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Publication number: 20200051861Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.Type: ApplicationFiled: August 6, 2019Publication date: February 13, 2020Inventors: Meiyu PIAO, Kentaro ODANAKA, Masatoshi WAKAHARA, Wakana ONOE, Heidi LAN
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Publication number: 20200051862Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.Type: ApplicationFiled: August 6, 2019Publication date: February 13, 2020Inventors: Meiyu PIAO, Kentaro ODANAKA, Masatoshi WAKAHARA, Wakana ONOE, Heidi LAN
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Publication number: 20190333817Abstract: A processing method of a workpiece for processing the workpiece including a substrate and a film made on a back surface of the substrate is provided. The processing method includes a sheet sticking step of sticking a sheet to the film, a protective film forming step of forming a protective film that covers the front surface side of the substrate, a mask pattern forming step of removing a part corresponding to planned dividing lines in the protective film and forming a mask pattern on the front surface side, an etching step of carrying out dry etching for the substrate from the front surface side and forming etching grooves and a film dividing step of dividing the film along the etching grooves by pressing the workpiece by an edge of a tip part of a pressing member having the tip part in which the edge has a curved shape.Type: ApplicationFiled: April 24, 2019Publication date: October 31, 2019Inventors: Yukiko MATSUMOTO, Meiyu PIAO
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Publication number: 20190079478Abstract: A method of processing a device wafer includes the steps of applying a water-soluble protective film agent to a face side of the device wafer to form protective films thereon for protecting devices and leaving projected dicing lines exposed, dry-etching the device wafer through the protective films with a dry etching apparatus, recording a time when the water-soluble protective film agent is applied to the device wafer, confirming that the device wafer with the protective films formed thereon has been introduced into the dry etching apparatus, and issuing a warning if the introduction of the device wafer into the dry etching apparatus is not confirmed upon elapse of a predetermined time from the recorded time.Type: ApplicationFiled: September 7, 2018Publication date: March 14, 2019Inventors: Meiyu Piao, Masahisa Tokuyama
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Patent number: 9934957Abstract: A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge of the bonded wafer to a position that is spaced radially inwardly toward the center of the bonded wafer by a predetermined distance. Bonding is done by a method that includes a captured image forming step of irradiating the outer peripheral edge of the bonded wafer with light emitted from an irradiating unit and passing through a through hole, and imaging the outer peripheral edge of the bonded wafer with an imaging camera disposed in facing relation to the irradiating unit with the bonded wafer interposed therebetween, thereby to capture an image, and an outer peripheral edge position detecting step of detecting an outer peripheral edge position of the bonded wafer on the basis of the captured image.Type: GrantFiled: March 30, 2017Date of Patent: April 3, 2018Assignee: Disco CorporationInventors: Hirohiko Kozai, Kazuki Terada, Meiyu Piao
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Publication number: 20170294300Abstract: A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge of the bonded wafer to a position that is spaced radially inwardly toward the center of the bonded wafer by a predetermined distance. Bonding is done by a method that includes a captured image forming step of irradiating the outer peripheral edge of the bonded wafer with light emitted from an irradiating unit and passing through a through hole, and imaging the outer peripheral edge of the bonded wafer with an imaging camera disposed in facing relation to the irradiating unit with the bonded wafer interposed therebetween, thereby to capture an image, and an outer peripheral edge position detecting step of detecting an outer peripheral edge position of the bonded wafer on the basis of the captured image.Type: ApplicationFiled: March 30, 2017Publication date: October 12, 2017Inventors: Hirohiko Kozai, Kazuki Terada, Meiyu Piao