Abstract: Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.

Abstract: Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.

Abstract: Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.

Abstract: Methods for packaging a functional chip, methods for annealing a functional chip, and chip assemblies. A functional chip and an annealing chip are located inside a package. The functional chip includes an integrated circuit. The annealing chip includes an annealing element source comprised of an annealing element or a light source configured to emit electromagnetic radiation. The integrated circuit of the functional chip receives the annealing element, electromagnetic radiation, or both from the annealing chip in order to perform an annealing procedure that extends the useful lifetime of the packaged integrated circuit.

Abstract: Methods and structures for restoring an electrical parameter of a field-effect transistor in an integrated circuit deployed in an end product. A source, a drain, and a gate electrode of a field-effect transistor are coupled with ground. A restoration voltage is applied to a well beneath the field-effect transistor while the source, the drain, and the gate electrode of the field-effect transistor are coupled with ground. The well may be coupled with either a positive supply voltage or ground when a switch is in a first position during normal operation of the integrated circuit and with the restoration voltage when the switch is in a second position during a relaxation operation.

Abstract: Methods for packaging a functional chip, methods for annealing a functional chip, and chip assemblies. A functional chip and an annealing chip are located inside a package. The functional chip includes an integrated circuit. The annealing chip includes an annealing element source comprised of an annealing element or a light source configured to emit electromagnetic radiation. The integrated circuit of the functional chip receives the annealing element, electromagnetic radiation, or both from the annealing chip in order to perform an annealing procedure that extends the useful lifetime of the packaged integrated circuit.

Abstract: Methods and structures for restoring an electrical parameter of a field-effect transistor in an integrated circuit deployed in an end product. A source, a drain, and a gate electrode of a field-effect transistor are coupled with ground. A restoration voltage is applied to a well beneath the field-effect transistor while the source, the drain, and the gate electrode of the field-effect transistor are coupled with ground. The well may be coupled with either a positive supply voltage or ground when a switch is in a first position during normal operation of the integrated circuit and with the restoration voltage when the switch is in a second position during a relaxation operation.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.

Abstract: An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator.

Abstract: An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator.

Abstract: An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

Abstract: An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

Abstract: An epitaxial semiconductor layer may be formed in a first area reserved for p-type field effect transistors. An ion implantation mask layer is formed and patterned to provide an opening in the first area, while blocking at least a second area reserved for n-type field effect transistors. Fluorine is implanted into the opening to form an epitaxial fluorine-doped semiconductor layer and an underlying fluorine-doped semiconductor layer in the first area. A composite gate stack including a high-k gate dielectric layer and an adjustment oxide layer is formed in the first and second area. P-type and n-type field effect transistors (FET's) are formed in the first and second areas, respectively. The epitaxial fluorine-doped semiconductor layer and the underlying fluorine-doped semiconductor layer compensate for the reduction of the decrease in the threshold voltage in the p-FET by the adjustment oxide portion directly above.

Abstract: An epitaxial semiconductor layer may be formed in a first area reserved for p-type field effect transistors. An ion implantation mask layer is formed and patterned to provide an opening in the first area, while blocking at least a second area reserved for n-type field effect transistors. Fluorine is implanted into the opening to form an epitaxial fluorine-doped semiconductor layer and an underlying fluorine-doped semiconductor layer in the first area. A composite gate stack including a high-k gate dielectric layer and an adjustment oxide layer is formed in the first and second area. P-type and n-type field effect transistors (FET's) are formed in the first and second areas, respectively. The epitaxial fluorine-doped semiconductor layer and the underlying fluorine-doped semiconductor layer compensate for the reduction of the decrease in the threshold voltage in the p-FET by the adjustment oxide portion directly above.

Abstract: A design structure embodied in a machine readable medium is provided for use in the design, manufacturing, and/or testing of Ics that include at least one SRAM cell. In particular, the present invention provides a design structure of an IC embodied in a machine readable medium, the IC including at least one SRAM cell with a gamma ratio of about 1 or greater. In the present invention, the gamma ratio is increased with degraded pFET device performance. Moreover, in the inventive IC, there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention provides a design structure of an IC embodied in a machine readable medium, the IC comprising at least one static random access memory cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the at least one nFET and the at least one pFET.

Abstract: An integrated circuit (IC) is provided that includes at least one static random access memory (SRAM) cell wherein performance of the SRAM cell is enhanced, yet with good stability and writability. In particular, the present invention provides an IC including at least one SRAM cell wherein the gamma ratio is about 1 or greater. The gamma ratio is increased with degraded pFET device performance. Morever, in the inventive IC there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention provides an integrated circuit (IC) that comprises at least one SRAM cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the nFET and the pFET.

Abstract: An IC is provided that includes at least one SRAM cell in which the performance of the SRAM cell is enhanced, yet maintaining good stability and writability. In particular, the present invention provides an IC including at least one SRAM cell wherein the gamma ratio is about 1 or greater. In the present invention, the gamma ratio is increased with degraded pFET device performance. Moreover, in the inventive IC there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention, solves the above by providing an integrated circuit (IC) that comprises at least one static random access memory cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the at least one nFET and the at least one pFET.

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.