Patents by Inventor Melanie Sherony

Melanie Sherony has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor resistor formed in metal gate stack
    Patent number: 7879666
    Abstract: A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a conductive upper region (46) and a conduction barrier (47), thereby confining current flow in the resistor semiconductor layer (36) to only the top region (46) in the finally formed device.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: February 1, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Da Zhang, Chendong Zhu, Xiangdong Chen, Melanie Sherony
  • Semiconductor Resistor Formed in Metal Gate Stack
    Publication number: 20100019328
    Abstract: A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a conductive upper region (46) and a conduction barrier (47), thereby confining current flow in the resistor semiconductor layer (36) to only the top region (46) in the finally formed device.
    Type: Application
    Filed: July 23, 2008
    Publication date: January 28, 2010
    Inventors: Da Zhang, Chendong Zhu, Xiangdong Chen, Melanie Sherony