Patents by Inventor Melia Tjio
Melia Tjio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10259907Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.Type: GrantFiled: February 20, 2015Date of Patent: April 16, 2019Assignees: AZ Electronic Materials (Luxembourg) S.à r.l., IBM CorporationInventors: Ankit Vora, Eri Hirahara, Joy Cheng, Durairaj Baskaran, Orest Polishchuk, Melia Tjio, Margareta Paunescu, Daniel Sanders, Guanyang Lin
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Patent number: 10059820Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: GrantFiled: July 25, 2017Date of Patent: August 28, 2018Assignee: International Business Machines CorporationInventors: Markus Brink, Joy Cheng, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, HsinYu Tsai
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Publication number: 20170321025Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: ApplicationFiled: July 25, 2017Publication date: November 9, 2017Inventors: Markus Brink, Joy Cheng, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, Hsin Yu Tsai
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Patent number: 9738765Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: GrantFiled: February 19, 2015Date of Patent: August 22, 2017Assignee: International Business Machines CorporationInventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, HsinYu Tsai
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Patent number: 9659824Abstract: Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.Type: GrantFiled: April 28, 2015Date of Patent: May 23, 2017Assignee: International Business Machines CorporationInventors: Joy Cheng, Matthew E. Colburn, Michael A. Guillorn, Chi-Chun Liu, Melia Tjio, HsinYu Tsai
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Patent number: 9574107Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.Type: GrantFiled: February 16, 2015Date of Patent: February 21, 2017Assignee: International Business Machines CorporationInventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Patent number: 9562127Abstract: Block polymers are formed by ring opening polymerization (ROP) of a cyclic carbonate monomer using a polymeric initiator for the ROP that comprises repeating functionalized ethylene units. The block polymers are free of, or substantially free of, any polymer having a chemical structure that does not comprise the polymer backbone of the polymeric initiator. The block polymers are capable of directed self-assembly.Type: GrantFiled: May 16, 2014Date of Patent: February 7, 2017Assignee: International Business Machines CorporationInventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Patent number: 9556353Abstract: An orientation control layer (OCL) for self-assembly of block copolymers comprises a random copolymer comprising a first repeat unit having an ethylenic backbone functional group and a side chain aromatic ring, a second repeat unit comprising an ethylenic backbone functional group and a side chain polycarbonate, and a third repeat unit comprising an ethylenic backbone functional group and a side chain ester or amide bearing an active group capable of forming a covalent bond with a substrate surface (e.g., a silicon wafer). The OCLs are neutral wetting to block copolymers having a high Flory-Huggins interaction parameter chi (?) (“high-chi” block copolymers) such as a block copolymer comprising a polystyrene block and a polycarbonate block. The neutral OCL wetting properties allow for formation of lamellar domain patterns of the self-assembled high-chi block copolymers to be oriented perpendicular to the OCL surface.Type: GrantFiled: October 29, 2014Date of Patent: January 31, 2017Assignee: International Business Machines CorporationInventors: Joy Cheng, Anindarupa Chunder, Melia Tjio, Ankit Vora
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Publication number: 20160322259Abstract: Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.Type: ApplicationFiled: April 28, 2015Publication date: November 3, 2016Inventors: Joy Cheng, Matthew E. Colburn, Michael A. Guillorn, Chi-Chun Liu, Melia Tjio, HsinYu Tsai
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Publication number: 20160304740Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.Type: ApplicationFiled: April 15, 2015Publication date: October 20, 2016Inventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Patent number: 9458353Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.Type: GrantFiled: April 15, 2015Date of Patent: October 4, 2016Assignee: International Business Machines CorporationInventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Publication number: 20160244557Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.Type: ApplicationFiled: February 20, 2015Publication date: August 25, 2016Applicants: International Business Machines CorporationInventors: Ankit VORA, Eri HIRAHARA, Joy CHENG, Durairaj BASKARAN, Orest POLISHCHUK, Melia TJIO, Margareta PAUNESCU, Daniel SANDERS, Guanyang LIN
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Publication number: 20160244581Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: ApplicationFiled: February 19, 2015Publication date: August 25, 2016Inventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, HsinYu Tsai
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Publication number: 20160237307Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.Type: ApplicationFiled: February 16, 2015Publication date: August 18, 2016Inventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Publication number: 20160122571Abstract: An orientation control layer (OCL) for self-assembly of block copolymers comprises a random copolymer comprising a first repeat unit having an ethylenic backbone functional group and a side chain aromatic ring, a second repeat unit comprising an ethylenic backbone functional group and a side chain polycarbonate, and a third repeat unit comprising an ethylenic backbone functional group and a side chain ester or amide bearing an active group capable of forming a covalent bond with a substrate surface (e.g., a silicon wafer). The OCLs are neutral wetting to block copolymers having a high Flory-Huggins interaction parameter chi (?) (“high-chi” block copolymers) such as a block copolymer comprising a polystyrene block and a polycarbonate block. The neutral OCL wetting properties allow for formation of lamellar domain patterns of the self-assembled high-chi block copolymers to be oriented perpendicular to the OCL surface.Type: ApplicationFiled: October 29, 2014Publication date: May 5, 2016Inventors: Joy Cheng, Anindarupa Chunder, Melia Tjio, Ankit Vora
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Publication number: 20150329664Abstract: Block polymers are formed by ring opening polymerization (ROP) of a cyclic carbonate monomer using a polymeric initiator for the ROP that comprises repeating functionalized ethylene units. The block polymers are free of, or substantially free of, any polymer having a chemical structure that does not comprise the polymer backbone of the polymeric initiator. The block polymers are capable of directed self-assembly.Type: ApplicationFiled: May 16, 2014Publication date: November 19, 2015Applicant: International Business Machines CorporationInventors: Joy Cheng, Anindarupa Chunder, Daniel P. Sanders, Melia Tjio, Ankit Vora
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Patent number: 9159558Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.Type: GrantFiled: March 15, 2013Date of Patent: October 13, 2015Assignee: International Business Machines CorporationInventors: Joy Cheng, Daniel P. Sanders, Melia Tjio
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Patent number: 8945513Abstract: A nanoshell is disclosed, comprising a star polymer occlusion complex comprising i) an amphiphilic unimolecular star polymer having a crosslinked core covalently linked to 6 or more independent polymer arms, and ii) a cargo material occluded in the star polymer; and a shell comprising an inorganic material in contact with a peripheral surface of the star polymer occlusion complex.Type: GrantFiled: March 18, 2011Date of Patent: February 3, 2015Assignees: International Business Machines Corporation, San Jose State University Research FoundationInventors: Victor Yee-Way Lee, Robert Dennis Miller, Joseph Sly, Melia Tjio
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Publication number: 20140273476Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: International Business Machines CorporationInventors: Joy Cheng, Daniel P. Sanders, Melia Tjio
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Publication number: 20120237447Abstract: A nanoshell is disclosed, comprising a star polymer occlusion complex comprising i) an amphiphilic unimolecular star polymer having a crosslinked core covalently linked to 6 or more independent polymer arms, and ii) a cargo material occluded in the star polymer; and a shell comprising an inorganic material in contact with a peripheral surface of the star polymer occlusion complex.Type: ApplicationFiled: March 18, 2011Publication date: September 20, 2012Applicants: SAN JOSE STATE UNIVERSITY RESEARCH FOUNDATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Victor Yee-Way Lee, Robert Dennis Miller, Hector Hugo Nuno, Joseph Sly, Melia Tjio