Patents by Inventor Melissa Alyson Smith

Melissa Alyson Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrospray devices and methods for fabricating electrospray devices
    Patent number: 11708182
    Abstract: Electrospray devices and methods of fabricating electrospray devices are described.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: July 25, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Melissa Alyson Smith, Donna-Ruth Yost, Daniel Freeman, Noah Siegel, Paulo C. Lozano
  • ELECTROSPRAY DEVICES AND METHODS FOR FABRICATING ELECTROSPRAY DEVICES
    Publication number: 20220068623
    Abstract: Electrospray devices and methods of fabricating electrospray devices are described
    Type: Application
    Filed: August 31, 2020
    Publication date: March 3, 2022
    Applicant: Massachusetts Institute of Technology
    Inventors: Melissa Alyson Smith, Donna-Ruth Yost, Daniel Freeman, Noah Siegel, Paulo C. Lozano
  • Flexible high-voltage thin film transistors
    Patent number: 9525071
    Abstract: A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: December 20, 2016
    Assignee: Massachusetts Institute of Technology
    Inventors: Melissa Alyson Smith, Akintunde I. Akinwande
  • EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UNDERLAYER
    Publication number: 20160163707
    Abstract: Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.
    Type: Application
    Filed: February 5, 2016
    Publication date: June 9, 2016
    Inventors: Kangguo Cheng, Eric C.T. Harley, Judson R. Holt, Gauri V. Karve, Yue Ke, Derrick Liu, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek, Melissa Alyson Smith
  • FLEXIBLE HIGH-VOLTAGE THIN FILM TRANSISTORS
    Publication number: 20150001539
    Abstract: A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
    Type: Application
    Filed: February 22, 2013
    Publication date: January 1, 2015
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Melissa Alyson Smith, Akintunde I. Akinwande